No. |
Part Name |
Description |
Manufacturer |
1 |
1819AB12 |
12 W, 25 V, 1808-1880 MHz common emitter transistor |
GHz Technology |
2 |
1819AB25 |
25 W, 25 V, 1808-1880 MHz common emitter transistor |
GHz Technology |
3 |
1819AB35 |
35 W, 25 V, 1808-1880 MHz common emitter transistor |
GHz Technology |
4 |
1819AB4 |
4 W, 25 V, 1808-1880 MHz common emitter transistor |
GHz Technology |
5 |
25A19ABG0 |
Selenium Transient Voltage Suppressors, Phenolic tube types, WIRE LEAD |
ITT Semiconductors |
6 |
25A19ABG19 |
Selenium Transient Voltage Suppressors, Phenolic tube types, wire lead |
ITT Semiconductors |
7 |
8A19ABG0 |
Selenium Transient Voltage Suppressors, Phenolic tube types, WIRE LEAD |
ITT Semiconductors |
8 |
8A19ABG19 |
Selenium Transient Voltage Suppressors, Phenolic tube types, wire lead |
ITT Semiconductors |
9 |
GS88219AB-133 |
133MHz 512K x 18 9Mb SCD/DCD sync burst SRAM |
GSI Technology |
10 |
GS88219AB-133I |
133MHz 512K x 18 9Mb SCD/DCD sync burst SRAM |
GSI Technology |
11 |
GS88219AB-150 |
150MHz 512K x 18 9Mb SCD/DCD sync burst SRAM |
GSI Technology |
12 |
GS88219AB-150I |
150MHz 512K x 18 9Mb SCD/DCD sync burst SRAM |
GSI Technology |
13 |
GS88219AB-166 |
166MHz 512K x 18 9Mb SCD/DCD sync burst SRAM |
GSI Technology |
14 |
GS88219AB-166I |
166MHz 512K x 18 9Mb SCD/DCD sync burst SRAM |
GSI Technology |
15 |
GS88219AB-200 |
200MHz 512K x 18 9Mb SCD/DCD sync burst SRAM |
GSI Technology |
16 |
GS88219AB-200I |
200MHz 512K x 18 9Mb SCD/DCD sync burst SRAM |
GSI Technology |
17 |
GS88219AB-225 |
225MHz 512K x 18 9Mb SCD/DCD sync burst SRAM |
GSI Technology |
18 |
GS88219AB-225I |
225MHz 512K x 18 9Mb SCD/DCD sync burst SRAM |
GSI Technology |
19 |
GS88219AB-250 |
250MHz 512K x 18 9Mb SCD/DCD sync burst SRAM |
GSI Technology |
20 |
GS88219AB-250I |
250MHz 512K x 18 9Mb SCD/DCD sync burst SRAM |
GSI Technology |
21 |
R1221N19AB-TR |
Step-down DC/DC converter with voltage detector. Output voltage (Vout) 1.9V. Detector threshold (-Vdet) 3.0V. Oscillator frequency 500kHz |
Ricoh |
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