| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1N4719E |
Diode Switching 50V 3A 2-Pin TOP HAT |
New Jersey Semiconductor |
| 2 |
1N5419E3 |
Fast Rectifier (100-500ns) |
Microsemi |
| 3 |
1N6119e3 |
Standard Unidirectional and Bidirectional TVS |
Microsemi |
| 4 |
1N6319E3 |
Zener Voltage Regulator Diode |
Microsemi |
| 5 |
1PMT4119E3 |
Zener Voltage Regulator Diode |
Microsemi |
| 6 |
1PMT4119e3/TR13 |
Zener Voltage Regulator Diode |
Microsemi |
| 7 |
1PMT4119e3/TR7 |
Zener Voltage Regulator Diode |
Microsemi |
| 8 |
2N3419E3 |
NPN Transistor |
Microsemi |
| 9 |
A2919EB |
Dual full-bridge PWM motor driver |
Allegro MicroSystems |
| 10 |
A2919ELB |
Dual full-bridge PWM motor driver |
Allegro MicroSystems |
| 11 |
BPT1819E03 |
NPN silicon microwave power transistor. |
BOPOLARICS |
| 12 |
BPT1819E03 |
High Performance Silicon Bipolar Transistor Intended |
etc |
| 13 |
BPT1819E04 |
NPN silicon microwave power transistor. |
BOPOLARICS |
| 14 |
BPT1819E08 |
NPN silicon microwave power transistor. |
BOPOLARICS |
| 15 |
BPT1819E10 |
NPN silicon microwave power transistor. |
BOPOLARICS |
| 16 |
BPT1819E12 |
NPN silicon microwave power transistor. |
BOPOLARICS |
| 17 |
BPT1819E16 |
NPN silicon microwave power transistor. |
BOPOLARICS |
| 18 |
BSP319E6327 |
N-Channel SIPMOS Small-Signal Transistor |
Infineon |
| 19 |
BXY19E |
Silicon varactor for frequency multiplication up to the GHz range |
Siemens |
| 20 |
BXY19E |
Silicon varactor for frequency multiplication up to the GHz range |
Siemens |
| 21 |
BXY19E |
Silicon charge storage varactors for frequency multiplication |
Siemens |
| 22 |
C30619E |
Large-area InGaAs photodiode. TO-18 low profile with silicon window. |
PerkinElmer Optoelectronics |
| 23 |
C30619E-DTC |
Large-area InGaAs photodiode. TE-cooler option, 2-stage TE cooler. |
PerkinElmer Optoelectronics |
| 24 |
C30619E-TC |
Large-area InGaAs photodiode. TE-cooler option, 1-stage TE cooler. |
PerkinElmer Optoelectronics |
| 25 |
EVAL-AD7719EB |
Low Voltage, Low Power, Factory-Calibrated 16-/24-Bit Dual ADC |
Analog Devices |
| 26 |
EVAL-ADG919EB |
Wideband, 43 dB Isolation @ 1 GHz, CMOS 1.65 V to 2.75 V, 2:1 Mux/SPDT Switches |
Analog Devices |
| 27 |
GRM219E41H104MA01 |
Monolithic Ceramic Capacitors |
etc |
| 28 |
GRM219E41H104MA010.10UF |
Monolithic Ceramic Capacitors |
etc |
| 29 |
GRM219E41H104MA010805 |
Monolithic Ceramic Capacitors |
etc |
| 30 |
GRM219E41H104MA0150VDC |
Monolithic Ceramic Capacitors |
etc |
| | | |
