| No. |
Part Name |
Description |
Manufacturer |
| 1 |
K1S321611C-FI70 |
2Mx16 bit Uni-Transistor Random Access Memory |
Samsung Electronic |
| 2 |
K4F160411C-F50 |
4M x 4bit CMOS dynamic RAM with fast page mode, 5V, 50ns |
Samsung Electronic |
| 3 |
K4F160411C-F60 |
4M x 4bit CMOS dynamic RAM with fast page mode, 5V, 60ns |
Samsung Electronic |
| 4 |
K4F170411C-F50 |
4M x 4bit CMOS dynamic RAM with fast page mode, 5V, 50ns |
Samsung Electronic |
| 5 |
K4F170411C-F60 |
4M x 4bit CMOS dynamic RAM with fast page mode, 5V, 60ns |
Samsung Electronic |
| 6 |
K6T4008C1C-F |
512Kx8 bit Low Power CMOS Static RAM |
Samsung Electronic |
| 7 |
K6T4008U1C-F |
512Kx8 bit Low Power and Low Voltage CMOS Static RAM |
Samsung Electronic |
| 8 |
K6T4008V1C-F |
512Kx8 bit Low Power and Low Voltage CMOS Static RAM |
Samsung Electronic |
| 9 |
PS7241-1C-F3 |
400 V breakdown voltage transfer type 2-ch optical coupled MOSFET. |
NEC |
| 10 |
PS7241-1C-F4 |
400 V breakdown voltage transfer type 2-ch optical coupled MOSFET. |
NEC |
| | | |
