Datasheets for 1C-G

Datasheets found :: 22 Page: | 1 |

No.	Part Name	Description	Manufacturer
1	CDST-21C-G	Switching Diodes Array, VRRM=250V, VR=250V, PD=225mW, IF=200mA	Comchip Technology
2	K6T4008C1C-GB55	512Kx8 bit Low Power CMOS Static RAM	Samsung Electronic
3	K6T4008C1C-GB70	512Kx8 bit Low Power CMOS Static RAM	Samsung Electronic
4	K6T4008C1C-GF55	512Kx8 bit Low Power CMOS Static RAM	Samsung Electronic
5	K6T4008C1C-GF70	512Kx8 bit Low Power CMOS Static RAM	Samsung Electronic
6	K6T4008C1C-GL55	512Kx8 bit Low Power CMOS Static RAM	Samsung Electronic
7	K6T4008C1C-GL70	512Kx8 bit Low Power CMOS Static RAM	Samsung Electronic
8	K6T4008C1C-GP55	512Kx8 bit Low Power CMOS Static RAM	Samsung Electronic
9	K6T4008C1C-GP70	512Kx8 bit Low Power CMOS Static RAM	Samsung Electronic
10	K6T4008U1C-GB10	512Kx8 bit Low Power and Low Voltage CMOS Static RAM	Samsung Electronic
11	K6T4008U1C-GB70	512Kx8 bit Low Power and Low Voltage CMOS Static RAM	Samsung Electronic
12	K6T4008U1C-GB85	512Kx8 bit Low Power and Low Voltage CMOS Static RAM	Samsung Electronic
13	K6T4008U1C-GF10	512Kx8 bit Low Power and Low Voltage CMOS Static RAM	Samsung Electronic
14	K6T4008U1C-GF70	512Kx8 bit Low Power and Low Voltage CMOS Static RAM	Samsung Electronic
15	K6T4008U1C-GF85	512Kx8 bit Low Power and Low Voltage CMOS Static RAM	Samsung Electronic
16	K6T4008V1C-GB70	512Kx8 bit Low Power and Low Voltage CMOS Static RAM	Samsung Electronic
17	K6T4008V1C-GB85	512Kx8 bit Low Power and Low Voltage CMOS Static RAM	Samsung Electronic
18	K6T4008V1C-GF70	512Kx8 bit Low Power and Low Voltage CMOS Static RAM	Samsung Electronic
19	K6T4008V1C-GF85	512Kx8 bit Low Power and Low Voltage CMOS Static RAM	Samsung Electronic
20	LS101C-GS08	Small Signal Schottky Barrier Diodes	Vishay
21	LS101C-GS18	Small Signal Schottky Barrier Diodes	Vishay
22	USB3311C-GJ-TR	USB Transceivers	Microchip

Datasheets found :: 22 Page: | 1 |