| No. |
Part Name |
Description |
Manufacturer |
| 1 |
ER1D-T1 |
1.0A SURFACE MOUNT SUPER FAST RECTIFIER |
Won-Top Electronics |
| 2 |
ER1D-T3 |
1.0A SURFACE MOUNT SUPER FAST RECTIFIER |
Won-Top Electronics |
| 3 |
ER801D-T3 |
8.0A D2PAK SURFACE MOUNT SUPER FAST RECTIFIEIR |
Won-Top Electronics |
| 4 |
ES1D-T1 |
1.0A SURFACE MOUNT SUPER FAST RECTIFIER |
Won-Top Electronics |
| 5 |
ES1D-T3 |
1.0A SURFACE MOUNT SUPER FAST RECTIFIER |
Won-Top Electronics |
| 6 |
FR1D-T1 |
1.0A SURFACE MOUNT FAST RECOVERY RECTIFIER |
Won-Top Electronics |
| 7 |
FR1D-T3 |
1.0A SURFACE MOUNT FAST RECOVERY RECTIFIER |
Won-Top Electronics |
| 8 |
GS1D-T1 |
1.0A SURFACE MOUNT GLASS PASSIVATED RECTIFIER |
Won-Top Electronics |
| 9 |
GS1D-T3 |
1.0A SURFACE MOUNT GLASS PASSIVATED RECTIFIER |
Won-Top Electronics |
| 10 |
K4E151611D-T |
1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 1K refresh cycle. |
Samsung Electronic |
| 11 |
K4E171611D-T |
1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 4K refresh cycle. |
Samsung Electronic |
| 12 |
K4F151611D-T |
1M x 16 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 1K refresh cycle. |
Samsung Electronic |
| 13 |
K4F171611D-T |
1M x 16 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 4K refresh cycle. |
Samsung Electronic |
| 14 |
K6R1008C1D-TC10 |
256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). |
Samsung Electronic |
| 15 |
K6R1008C1D-TI10 |
256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). |
Samsung Electronic |
| 16 |
K6R1008V1D-TC08 |
256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). |
Samsung Electronic |
| 17 |
K6R1008V1D-TC10 |
256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). |
Samsung Electronic |
| 18 |
K6R1008V1D-TI08 |
256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). |
Samsung Electronic |
| 19 |
K6R1008V1D-TI10 |
256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). |
Samsung Electronic |
| 20 |
K6R1016C1D-TC10 |
256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). |
Samsung Electronic |
| 21 |
K6R1016C1D-TI10 |
256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). |
Samsung Electronic |
| 22 |
K6R1016V1D-TC08 |
256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). |
Samsung Electronic |
| 23 |
K6R1016V1D-TC10 |
256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). |
Samsung Electronic |
| 24 |
K6R1016V1D-TI08 |
256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). |
Samsung Electronic |
| 25 |
K6R1016V1D-TI10 |
256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). |
Samsung Electronic |
| 26 |
K6R4008C1D-TC10 |
256Kx16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges. |
Samsung Electronic |
| 27 |
K6R4008C1D-TI10 |
256Kx16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges. |
Samsung Electronic |
| 28 |
K6R4008V1D-TC08 |
256Kx16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges. |
Samsung Electronic |
| 29 |
K6R4008V1D-TC10 |
256Kx16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges. |
Samsung Electronic |
| 30 |
K6R4008V1D-TI08 |
256Kx16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges. |
Samsung Electronic |
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