No. |
Part Name |
Description |
Manufacturer |
1 |
APT10021JLL |
POWER MOS 7 1000V 37A 0.210 Ohm |
Advanced Power Technology |
2 |
APT10021JLL |
MOSFET |
Microsemi |
3 |
APT12031JLL |
POWER MOS 7 1200V 30A 0.310 Ohm |
Advanced Power Technology |
4 |
APT20M11JLL |
MOSFET |
Microsemi |
5 |
APT8011JLL |
POWER MOS 7 800V 51A 0.110 Ohm |
Advanced Power Technology |
6 |
APT8011JLL |
MOSFET |
Microsemi |
7 |
BCX71JLT1 |
General Purpose Transistor |
ON Semiconductor |
8 |
DM1623-1JL3 |
16 characters x 2 line Liquid Crystal Dot Matrix Display Module |
SANYO |
9 |
DM1623-1JL7 |
16 characters x 2 line Liquid Crystal Dot Matrix Display Module |
SANYO |
10 |
DM2023-1JL3 |
20 characters x 2 line Liquid Crystal Dot Matrix Display Module |
SANYO |
11 |
DM2023-1JL7 |
20 characters x 2 line Liquid Crystal Dot Matrix Display Module |
SANYO |
12 |
DM2423-1JL3 |
24 characters x 2 line Liquid Crystal Dot Matrix Display Module |
SANYO |
13 |
DM2423-1JL7 |
24 characters x 2 line Liquid Crystal Dot Matrix Display Module |
SANYO |
14 |
ES1JL |
Discrete Devices -Diode-Super Fast Rectifier |
Taiwan Semiconductor |
15 |
HS1JL |
Discrete Devices -Diode-High Efficienct Recovery |
Taiwan Semiconductor |
16 |
MT4C4001JL |
1MEG x 4DRAM |
Micron Technology |
17 |
RS1JL |
Discrete Devices -Diode-Fast Recovery |
Taiwan Semiconductor |
18 |
RS1JLS |
Discrete Devices -Diode-High Efficienct Recovery |
Taiwan Semiconductor |
19 |
S1JL |
Discrete Devices -Diode-Standard Rectifier |
Taiwan Semiconductor |
20 |
S1JLS |
Discrete Devices -Diode-Standard Rectifier |
Taiwan Semiconductor |
21 |
TMS27C128-1JL |
131 072-Bit UV Erasable Programmable Read-Only Memory 28-CDIP 0 to 70 |
Texas Instruments |
22 |
TMS27C256-1JL |
262 144-Bitprogrammable Read-Only Memory 28-CDIP 0 to 70 |
Texas Instruments |
23 |
TMS27C512-1JL |
524 288-Bit Programmable Read-Only Memory 28-CDIP 0 to 70 |
Texas Instruments |
24 |
TMS9901JL |
Programmable system interface |
Texas Instruments |
| | | |