| No. |
Part Name |
Description |
Manufacturer |
| 1 |
HYB3118160BSJ-50 |
1M x 16-Bit Dynamic RAM 1k Refresh |
Siemens |
| 2 |
HYB3118160BSJ-60 |
1M x 16-Bit Dynamic RAM 1k Refresh |
Siemens |
| 3 |
HYB3118165BSJ-50 |
1M x 16-Bit Dynamic RAM 1k Refresh |
Siemens |
| 4 |
HYB3118165BSJ-60 |
1M x 16-Bit Dynamic RAM 1k Refresh |
Siemens |
| 5 |
HYB3118165BST-50 |
1M x 16-Bit Dynamic RAM 1k Refresh |
Siemens |
| 6 |
HYB3118165BST-60 |
1M x 16-Bit Dynamic RAM 1k Refresh |
Siemens |
| 7 |
HYB5118160BSJ-50 |
1M x 16-Bit Dynamic RAM 1k Refresh |
Siemens |
| 8 |
HYB5118160BSJ-50 |
-1M x 16-Bit Dynamic RAM 1k Refresh |
Siemens |
| 9 |
HYB5118160BSJ-50 |
-1M x 16-Bit Dynamic RAM 1k Refresh |
Siemens |
| 10 |
HYB5118160BSJ-60 |
1M x 16-Bit Dynamic RAM 1k Refresh |
Siemens |
| 11 |
HYB5118165BSJ-50 |
1M x 16-Bit Dynamic RAM 1k Refresh |
Siemens |
| 12 |
HYB5118165BSJ-60 |
1M x 16-Bit Dynamic RAM 1k Refresh |
Siemens |
| 13 |
HYB5118165BSJBST-50 |
-1M x 16-Bit Dynamic RAM 1k Refresh |
Siemens |
| 14 |
HYB5118165BSJBST-50 |
-1M x 16-Bit Dynamic RAM 1k Refresh |
Siemens |
| 15 |
HYB5118165BST-50 |
1M x 16-Bit Dynamic RAM 1k Refresh |
Siemens |
| 16 |
HYB5118165BST-60 |
1M x 16-Bit Dynamic RAM 1k Refresh |
Siemens |
| 17 |
K4E151611D-J |
1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 1K refresh cycle. |
Samsung Electronic |
| 18 |
K4E151611D-T |
1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 1K refresh cycle. |
Samsung Electronic |
| 19 |
K4E151612D-J |
1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 1K refresh cycle. |
Samsung Electronic |
| 20 |
K4E151612D-T |
1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 1K refresh cycle. |
Samsung Electronic |
| 21 |
K4F151611D-J |
1M x 16 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 1K refresh cycle. |
Samsung Electronic |
| 22 |
K4F151611D-T |
1M x 16 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 1K refresh cycle. |
Samsung Electronic |
| 23 |
K4F151612D-J |
1M x 16 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 1K refresh cycle. |
Samsung Electronic |
| 24 |
K4F151612D-T |
1M x 16 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 1K refresh cycle. |
Samsung Electronic |
| 25 |
N87C196NT |
CHMOS microcontroller with 1 Mbytes linear address space, 32K OTPROM, 1K Reg RAM, 512 Code RAM, 56 I/O |
Intel |
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