| No. |
Part Name |
Description |
Manufacturer |
| 1 |
FM21L16-60-TG |
2-Mbit (128 K � 16) F-RAM Memory |
Cypress |
| 2 |
FM21L16-60-TGTR |
2-Mbit (128 K � 16) F-RAM Memory |
Cypress |
| 3 |
IDT7381L16G |
Fast CMOS 16-bit registered transceiver |
IDT |
| 4 |
IDT7381L16J |
Fast CMOS 16-bit registered transceiver |
IDT |
| 5 |
MSU2031L16 |
low working voltage 16 MHz ROM less MCU |
Mosel Vitelic Corp |
| 6 |
MSU2051L16 |
low working voltage 16 MHz ROM less MCU |
Mosel Vitelic Corp |
| 7 |
N01L163WC2A |
1Mb Ultra-Low Power Asynchronous CMOS SRAM |
etc |
| 8 |
N01L163WC2AB |
1Mb Ultra-Low Power Asynchronous CMOS SRAM |
etc |
| 9 |
N01L163WC2AB-55I |
1Mb Ultra-Low Power Asynchronous CMOS SRAM |
etc |
| 10 |
N01L163WC2AB1 |
1Mb Ultra-Low Power Asynchronous CMOS SRAM |
etc |
| 11 |
N01L163WC2AB1-55I |
1Mb Ultra-Low Power Asynchronous CMOS SRAM |
etc |
| 12 |
N01L163WC2AT |
1Mb Ultra-Low Power Asynchronous CMOS SRAM |
etc |
| 13 |
N01L163WC2AT-55I |
1Mb Ultra-Low Power Asynchronous CMOS SRAM |
etc |
| 14 |
N01L163WC2AT2 |
1Mb Ultra-Low Power Asynchronous CMOS SRAM |
etc |
| 15 |
N01L163WC2AT2-55I |
1Mb Ultra-Low Power Asynchronous CMOS SRAM |
etc |
| 16 |
UT51L164JC-35 |
Access time: 35 ns, 256 K x 16 Bit EDO DRAM |
UTRON Technology |
| 17 |
UT51L164JC-40 |
Access time: 40 ns, 256 K x 16 Bit EDO DRAM |
UTRON Technology |
| 18 |
UT51L164JC-50 |
Access time: 50 ns, 256 K x 16 Bit EDO DRAM |
UTRON Technology |
| 19 |
UT51L164JC-60 |
Access time: 60 ns, 256 K x 16 Bit EDO DRAM |
UTRON Technology |
| 20 |
UT51L164MC-35 |
Access time: 35 ns, 256 K x 16 Bit EDO DRAM |
UTRON Technology |
| 21 |
UT51L164MC-40 |
Access time: 40 ns, 256 K x 16 Bit EDO DRAM |
UTRON Technology |
| 22 |
UT51L164MC-50 |
Access time: 50 ns, 256 K x 16 Bit EDO DRAM |
UTRON Technology |
| 23 |
UT51L164MC-60 |
Access time: 60 ns, 256 K x 16 Bit EDO DRAM |
UTRON Technology |
| | | |
