| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1680A |
1680A Standalone Logic Analyzer with 800 MHz Timing/200 MHz State, 136 Channels, 1M Memory |
Agilent (Hewlett-Packard) |
| 2 |
1681A |
1681A Standalone Logic Analyzer with 800 MHz Timing/200 MHz State, 102 Channels, 1M Memory |
Agilent (Hewlett-Packard) |
| 3 |
1682A |
1682A Standalone Logic Analyzer with 800 MHz Timing/200 MHz State, 68 Channels, 1M Memory |
Agilent (Hewlett-Packard) |
| 4 |
1683A |
1683A Standalone Logic Analyzer with 800 MHz Timing/200 MHz State, 34 Channels, 1M Memory |
Agilent (Hewlett-Packard) |
| 5 |
1690A |
1690A PC-Hosted Logic Analyzer with 800 MHz Timing/200 MHz State, 136 Channels, 1M Memory |
Agilent (Hewlett-Packard) |
| 6 |
1691A |
1691A PC-Hosted Logic Analyzer with 800 MHz Timing/200 MHz State, 102 Channels, 1M Memory |
Agilent (Hewlett-Packard) |
| 7 |
1692A |
1692A PC-Hosted Logic Analyzer with 800 MHz Timing/200 MHz State, 68 Channels, 1M Memory |
Agilent (Hewlett-Packard) |
| 8 |
1693A |
1693A PC-Hosted Logic Analyzer with 800 MHz Timing/200 MHz State, 34 Channels, 1M Memory |
Agilent (Hewlett-Packard) |
| 9 |
24C1024 |
2-wire Serial EEPROM 1M (131,072 x 8) |
Atmel |
| 10 |
27C080 |
8-Megabit 1M x 8 UV Erasable CMOS EPROM |
Atmel |
| 11 |
27C800 |
8M-BIT [1M x8] CMOS EPROM |
Macronix International |
| 12 |
29F1610 |
16M-BIT [2M x8/1M x16] CMOS SINGLE VOLTAGE FLASH EEPROM |
Macronix International |
| 13 |
29F1610A |
16M-BIT [2M x8/1M x16] CMOS SINGLE VOLTAGE FLASH EEPROM |
Macronix International |
| 14 |
29F1610A-10 |
16M-BIT [2M x8/1M x16] CMOS SINGLE VOLTAGE FLASH EEPROM |
Macronix International |
| 15 |
29F1610A-12 |
16M-BIT [2M x8/1M x16] CMOS SINGLE VOLTAGE FLASH EEPROM |
Macronix International |
| 16 |
29F1610A-90 |
16M-BIT [2M x8/1M x16] CMOS SINGLE VOLTAGE FLASH EEPROM |
Macronix International |
| 17 |
29F800 |
8M (1M X 8/512K X 16) BIT |
Fujitsu Microelectronics |
| 18 |
2SJ601 |
Pch power MOSFET 60V RDS(on)1=31m ohm MAX. TO-251(MP-3), TO-252(MP-3Z) |
NEC |
| 19 |
2SJ601-Z |
Pch power MOSFET 60V RDS(on)1=31m ohm MAX. TO-251(MP-3), TO-252(MP-3Z) |
NEC |
| 20 |
2SJ607 |
Pch power MOSFET 60V Ron=11m ohm MAX. TO-220AB,TO-262,TO-263 |
NEC |
| 21 |
2SJ607-S |
Pch power MOSFET 60V Ron=11m ohm MAX. TO-220AB,TO-262,TO-263 |
NEC |
| 22 |
2SJ607-ZJ |
Pch power MOSFET 60V Ron=11m ohm MAX. TO-220AB,TO-262,TO-263 |
NEC |
| 23 |
54S416T |
1M x 4 Banks x 16 BITS SDRAM |
Ceramate |
| 24 |
54S416T-5 |
High-speed synchronous dynamic random access memory (SDRAM), organized as 1M words x 4 banks x 16 bits. Speed (CL = 3) 200MHz. Self refresh current (max) 1mA |
Ceramate |
| 25 |
54S416T-6 |
High-speed synchronous dynamic random access memory (SDRAM), organized as 1M words x 4 banks x 16 bits. Speed (CL = 3) 166MHz. Self refresh current (max) 1mA |
Ceramate |
| 26 |
54S416T-7 |
High-speed synchronous dynamic random access memory (SDRAM), organized as 1M words x 4 banks x 16 bits. Speed (CL = 3) 143MHz. Self refresh current (max) 1mA |
Ceramate |
| 27 |
82C52 |
Serial Controller Interface, UART, Baud Rate Generator, CMOS, 1M Baud |
Intersil |
| 28 |
8Q1024K8 |
high-performance 1M byte (8Mbit) CMOS static RAM |
Aeroflex Circuit Technology |
| 29 |
8Q1024K8SRAM |
high-performance 1M byte (8Mbit) CMOS static RAM |
Aeroflex Circuit Technology |
| 30 |
A29DL162 |
16 Megabit (2M x 8-Bit/1M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory |
AMIC Technology |
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