| No. |
Part Name |
Description |
Manufacturer |
| 1 |
AN-3418 |
Design Considerations for the RCA-S6431M Silicon Controlled Rectifier in High-Current Pulse Applications - App Note |
RCA Solid State |
| 2 |
GS81032AT |
32K x 32 / 1M Synchronous Burst SRAM |
GSI Technology |
| 3 |
HM628128BLFP-7 |
70ns; V(cc): -0.5 to +7.0V; 1W; 1M SRAM (128-Kword x 8-bit) |
Hitachi Semiconductor |
| 4 |
HM628128BLFP-75 |
75ns; V(cc): -0.5 to +7.0V; 1W; 1M SRAM (128-Kword x 8-bit) |
Hitachi Semiconductor |
| 5 |
HM628128BLFP-75SL |
75ns; V(cc): -0.5 to +7.0V; 1W; 1M SRAM (128-Kword x 8-bit) |
Hitachi Semiconductor |
| 6 |
HM628128BLFP-7SL |
70ns; V(cc): -0.5 to +7.0V; 1W; 1M SRAM (128-Kword x 8-bit) |
Hitachi Semiconductor |
| 7 |
HM628128BLFP-8 |
85ns; V(cc): -0.5 to +7.0V; 1W; 1M SRAM (128-Kword x 8-bit) |
Hitachi Semiconductor |
| 8 |
HM628128BLFP-8SL |
85ns; V(cc): -0.5 to +7.0V; 1W; 1M SRAM (128-Kword x 8-bit) |
Hitachi Semiconductor |
| 9 |
HM628128BLT-75 |
75ns; V(cc): -0.5 to +7.0V; 1W; 1M SRAM (128-Kword x 8-bit) |
Hitachi Semiconductor |
| 10 |
HM628128BLT-75SL |
75ns; V(cc): -0.5 to +7.0V; 1W; 1M SRAM (128-Kword x 8-bit) |
Hitachi Semiconductor |
| 11 |
HSDL-3612-037 |
HSDL-3612-037 · 1m SIR 3V TRANSCEIVER |
Agilent (Hewlett-Packard) |
| 12 |
LRS1302 |
Stacked Chip 8M Flash and 1M SRAM |
SHARP |
| 13 |
LRS13023 |
Stacked Chip 8M Flash and 1M SRAM |
SHARP |
| 14 |
S6431M |
Design Considerations for the RCA-S6431M Silicon Controlled Rectifier in High-Current Pulse Applications - App Note |
RCA Solid State |
| | | |
