No. |
Part Name |
Description |
Manufacturer |
1 |
68901N05 |
MULTI.FUNCTION PERIPHERAL |
ST Microelectronics |
2 |
MMDF1N05E |
DUAL TMOS MOSFET 50 VOLTS 1.5 AMPERE RDS(on) = 0.30 OHM |
Motorola |
3 |
MMDF1N05E |
Power MOSFET 1 Amp, 50 Volts |
ON Semiconductor |
4 |
MMDF1N05E-D |
Power MOSFET 1 Amp, 50 Volts N-Channel SO-8, Dual |
ON Semiconductor |
5 |
MMDF1N05ER2 |
Power MOSFET 1 Amp, 50 Volts |
ON Semiconductor |
6 |
SPD21N05L |
N-Channel SIPMOS Power Transistor |
Infineon |
7 |
SPD21N05L |
SIPMOS Power Transistor |
Siemens |
8 |
SPD31N05 |
N-Channel SIPMOS Power Transistor |
Infineon |
9 |
SPD31N05 |
SIPMOS Power Transistor |
Siemens |
10 |
SPU21N05L |
N-Channel SIPMOS Power Transistor |
Infineon |
11 |
SPU31N05 |
N-Channel SIPMOS Power Transistor |
Infineon |
12 |
STP21N05L |
N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR |
SGS Thomson Microelectronics |
13 |
STP21N05L |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN |
SGS Thomson Microelectronics |
14 |
STP21N05L |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN |
ST Microelectronics |
15 |
STP21N05LFI |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN |
SGS Thomson Microelectronics |
16 |
STP21N05LFI |
N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR |
SGS Thomson Microelectronics |
17 |
STP21N05LFI |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN |
ST Microelectronics |
18 |
T1N05 |
Mains frequency thyristor 1A |
IPRS Baneasa |
19 |
T1N05 |
1 AMP 50V THYRISTOR |
IPRS Baneasa |
20 |
T1N05C |
Mains frequency thyristor 1A |
IPRS Baneasa |
21 |
T1N05D |
Mains frequency thyristor 1A |
IPRS Baneasa |
22 |
T1N05G |
Mains frequency thyristor 1A |
IPRS Baneasa |
23 |
T1N05K |
Mains frequency thyristor 1A |
IPRS Baneasa |
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