| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1N55 |
Gold Bond Germanium Diode |
ITT Semiconductors |
| 2 |
1N55 |
Germanium Signal diode |
Motorola |
| 3 |
1N55 |
GOLD BOUNDED GERMANUM DIODE |
New Jersey Semiconductor |
| 4 |
1N550 |
Rectifier Diode |
Motorola |
| 5 |
1N550 |
Diode Zener Single 8.2V 10% 400mW 2-Pin DO-35 |
New Jersey Semiconductor |
| 6 |
1N551 |
Rectifier Diode |
Motorola |
| 7 |
1N551 |
Diode Zener Single 8.2V 10% 400mW 2-Pin DO-35 |
New Jersey Semiconductor |
| 8 |
1N5517 |
SCHOTTKY RECTIERS SILICON RECTIFIER DIODES |
Unknow |
| 9 |
1N5518 |
LOW REVERSE LEAKAGE CHARACTERISTICS |
Compensated Devices Incorporated |
| 10 |
1N5518 |
0.4W LOW VOLTAGE AVALANCHE DIODES |
Jinan Gude Electronic Device |
| 11 |
1N5518 |
LOW VOLTAGE AVALANCHE ZENER DIODES HIGH PERFORMANCE: LOW NOISE, LOW LEAKAGE |
Knox Semiconductor Inc |
| 12 |
1N5518 |
Low Voltage Avalanche Zener |
Microsemi |
| 13 |
1N5518 |
Low voltage avalanche silicon oxide passivated zener regulator diode 400mW 3.3V ±20% tolerance |
Motorola |
| 14 |
1N5518 |
Diode Zener Single 3.3V 20% 400mW 2-Pin DO-35 |
New Jersey Semiconductor |
| 15 |
1N5518-1 |
LOW VOLTAGE AVALANCHE DIODES DO-35 |
Microsemi |
| 16 |
1N5518A |
0.4W, low voltage avalanche diode. Nominal zener voltage 3.3 V. Test current 20 mAdc. +-10% tolerance. |
Jinan Gude Electronic Device |
| 17 |
1N5518A |
Low Voltage Avalanche Zener |
Microsemi |
| 18 |
1N5518A |
Low voltage avalanche silicon oxide passivated zener regulator diode 400mW 3.3V ±10% tolerance |
Motorola |
| 19 |
1N5518A |
Diode Zener Single 3.3V 10% 400mW 2-Pin DO-35 |
New Jersey Semiconductor |
| 20 |
1N5518A-1 |
Low Voltage Avalanche Zener |
Microsemi |
| 21 |
1N5518A-1E3 |
Low Voltage Avalanche Zener |
Microsemi |
| 22 |
1N5518AUR-1 |
Low Voltage Avalanche Zener |
Microsemi |
| 23 |
1N5518AUR-1E3 |
Low Voltage Avalanche Zener |
Microsemi |
| 24 |
1N5518B |
Leaded Zener Diode General Purpose |
Central Semiconductor |
| 25 |
1N5518B |
LOW REVERSE LEAKAGE CHARACTERISTICS |
Compensated Devices Incorporated |
| 26 |
1N5518B |
0.4 W, low voltage avalanche diode. Nominal zener voltage 3.3 V. Test current 20 mAdc. +-5% tolerance. |
Jinan Gude Electronic Device |
| 27 |
1N5518B |
Low Voltage Avalanche Zener |
Microsemi |
| 28 |
1N5518B |
Low Voltage Avalanche Zener |
Microsemi |
| 29 |
1N5518B |
Low voltage avalanche silicon oxide passivated zener regulator diode 400mW 3.3V ±5% tolerance |
Motorola |
| 30 |
1N5518B |
Diode Zener Single 3.3V 5% 400mW 2-Pin DO-35 |
New Jersey Semiconductor |
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