| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1N60E |
Diode Switching 50V 3A 2-Pin Case A |
New Jersey Semiconductor |
| 2 |
FCH041N60E |
N-Channel SuperFET� II MOSFET 600V, 77A, 41m? |
Fairchild Semiconductor |
| 3 |
MGP11N60E |
Insulated Gate Bipolar Transistor |
Motorola |
| 4 |
MGP11N60E-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 5 |
MGP11N60ED |
SHORT CIRCUIT RATED LOW ON-VOLTAGE |
ON Semiconductor |
| 6 |
MGP11N60ED-D |
Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 7 |
MGP21N60E |
Insulated Gate Bipolar Transistor |
Motorola |
| 8 |
MGP21N60E-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 9 |
MGW21N60ED |
Insulated Gate Bipolar Transistor |
Motorola |
| 10 |
MGW21N60ED-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 11 |
MTA1N60E |
Fully Isolated TMOS E-FET / Power Rifld Effect Transistor |
Motorola |
| 12 |
MTD1N60E |
TMOS POWER FET 1.0 AMPERE 600 VOLTS RDS(on) = 8.0 OHM |
Motorola |
| 13 |
MTD1N60E |
OBSOLETE - 1 Amp DPAK Surface Mount Products, N-Channel, VDSS 600 |
ON Semiconductor |
| 14 |
MTD1N60E-D |
TMOS E-FET Power Field Effect Transistor DPAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 15 |
MTP1N60E |
TMOS POWER FET 1.0 AMPERES 600 VOLTS RDS(on) = 8.0 OHM |
Motorola |
| 16 |
MTP1N60E |
OBSOLETE - 1 Amp TO-220AB, N-Channel, VDSS 600 |
ON Semiconductor |
| 17 |
MTP1N60E-D |
Power MOSFET 1 Amp, 600 Volts N-Channel TO-220 |
ON Semiconductor |
| 18 |
PHP1N60E |
PowerMOS transistor |
Philips |
| 19 |
PHX1N60E |
PowerMOS transistor Isolated version of PHP1N60E |
Philips |
| 20 |
PHX1N60E |
PowerMOS transistor Isolated version of PHP1N60E |
Philips |
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