No. |
Part Name |
Description |
Manufacturer |
1 |
1S32 |
DETECTOR, SWITCHING DIODE |
TOSHIBA |
2 |
1S32 |
General-purpose detector diode |
TOSHIBA |
3 |
1S32 |
Germanium point contact diode |
TOSHIBA |
4 |
1S3200 |
1W Zener diode 200V |
Texas Instruments |
5 |
1S3200A |
1W Zener diode 200V, ±5% tolerance |
Texas Instruments |
6 |
1S324 |
General-purpose switching diode |
TOSHIBA |
7 |
1S325 |
General-purpose switching diode |
TOSHIBA |
8 |
GP1S32 |
Subminiature Photointerrupter |
SHARP |
9 |
K1S321611C |
2Mx16 bit Uni-Transistor Random Access Memory |
Samsung Electronic |
10 |
K1S321611C-FI70 |
2Mx16 bit Uni-Transistor Random Access Memory |
Samsung Electronic |
11 |
K1S321611C-I |
2Mx16 bit Uni-Transistor Random Access Memory |
Samsung Electronic |
12 |
K1S321615M |
2M x 16 bit Uni-Transistor CMOS RAM Data Sheet |
Samsung Electronic |
13 |
K1S32161CC |
2Mx16 bit Page Mode Uni-Transistor Random Access Memory |
Samsung Electronic |
14 |
K1S32161CC-FI70 |
2Mx16 bit Page Mode Uni-Transistor Random Access Memory |
Samsung Electronic |
15 |
K1S32161CC-I |
2Mx16 bit Page Mode Uni-Transistor Random Access Memory |
Samsung Electronic |
16 |
K1S3216B1C |
2Mx16 bit Uni-Transistor Random Access Memory |
Samsung Electronic |
17 |
K1S3216B1C-I |
2Mx16 bit Uni-Transistor Random Access Memory |
Samsung Electronic |
18 |
K1S3216BCD |
2Mx16 bit Page Mode Uni-Transistor Random Access Memory |
Samsung Electronic |
19 |
ST1S32 |
4 A DC step-down switching regulator |
ST Microelectronics |
20 |
ST1S32PUR |
4 A DC step-down switching regulator |
ST Microelectronics |
21 |
STEVAL-ISA068V1 |
4 A / 1.5 MHz step-down synchronous switching regulator based on the ST1S32 in DFN 4x4 package |
ST Microelectronics |
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