| No. |
Part Name |
Description |
Manufacturer |
| 1 |
101S7AX0 |
Selenium Contact Protector Rectifiers, DC applications - 10 breaks/second max |
ITT Semiconductors |
| 2 |
101S7AX1 |
Selenium Contact Protector Rectifiers, DC applications - 40 breaks/second max |
ITT Semiconductors |
| 3 |
101S7EX0 |
Selenium Contact Protector Rectifiers, DC applications - 10 breaks/second max |
ITT Semiconductors |
| 4 |
101S7EX1 |
Selenium Contact Protector Rectifiers, DC applications - 40 breaks/second max |
ITT Semiconductors |
| 5 |
1S71 |
General-purpose detector diode |
TOSHIBA |
| 6 |
1S72 |
General-purpose detector diode |
TOSHIBA |
| 7 |
1S73 |
General-purpose switching diode |
TOSHIBA |
| 8 |
1S73 |
Germanium GOLDBOND diode |
TOSHIBA |
| 9 |
1S73A |
General-purpose switching diode |
TOSHIBA |
| 10 |
1S73A |
Germanium GOLDBOND diode |
TOSHIBA |
| 11 |
1S750 |
Silicon Point Contact Epitaxial, intended for use in UHF Tuner Mixer |
Hitachi Semiconductor |
| 12 |
1S752H |
Silicon Alloyed Junction, Zener Diode Vz=2.0...3.2 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
| 13 |
1S753H |
Silicon Alloyed Junction, Zener Diode Vz=3.0...3.9 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
| 14 |
1S754H |
Silicon Alloyed Junction, Zener Diode Vz=3.7...4.5 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
| 15 |
1S755H |
Silicon Alloyed Junction, Zener Diode Vz=4.3...5.4 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
| 16 |
1S756H |
Silicon Difused Junction, Zener Diode Vz=5.2...6.4 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
| 17 |
1S757H |
Silicon Difused Junction, Zener Diode Vz=6.2...8.0 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
| 18 |
1S758H |
Silicon Difused Junction, Zener Diode Vz=7.5...10.0 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
| 19 |
1S759H |
Silicon Difused Junction, Zener Diode Vz=9.0...12.0 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
| 20 |
1S760H |
Silicon Difused Junction, Zener Diode Vz=11.0...14.5 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
| 21 |
1S761H |
Silicon Difused Junction, Zener Diode Vz=13.5...18.0 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
| 22 |
1S762H |
Silicon Difused Junction, Zener Diode Vz=17.0...21.0 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
| 23 |
1S763H |
Silicon Difused Junction, Zener Diode Vz=20.0...27.0 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
| 24 |
1S764H |
Silicon Difused Junction, Zener Diode Vz=25.0...32.0 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
| 25 |
1S765H |
Silicon Difused Junction, Zener Diode Vz=30.0...39.0 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
| 26 |
1S77 |
Germanium Gold Bond for TV Horizontal Deflection Oscillator stage damper |
Hitachi Semiconductor |
| 27 |
1S770 |
Mobile alternator diode |
TOSHIBA |
| 28 |
1S770R |
Mobile alternator diode |
TOSHIBA |
| 29 |
1S777 |
Germanium rectifier - Tr TV Damper |
TOSHIBA |
| 30 |
1S77H |
Germanium Gold Bond Diode, intended for use in High Transfer Medium Speed Switching |
Hitachi Semiconductor |
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