No. |
Part Name |
Description |
Manufacturer |
1 |
29C021TI-1 |
High speed 150 ns CMOS 2 Megabit programmable and erasable ROM 256K x 8 BIT flash PEROM |
Turbo IC |
2 |
29C021TI-1 |
High speed CMOS. 2 Megabit programmable and erasable ROM. 256K x 8 bit flash PEROM. Access time 150 ns. |
Turbo IC |
3 |
29C021TI-2 |
High speed 200 ns CMOS 2 Megabit programmable and erasable ROM 256K x 8 BIT flash PEROM |
Turbo IC |
4 |
29C021TI-2 |
High speed CMOS. 2 Megabit programmable and erasable ROM. 256K x 8 bit flash PEROM. Access time 200 ns. |
Turbo IC |
5 |
29C021TI-3 |
High speed 250 ns CMOS 2 Megabit programmable and erasable ROM 256K x 8 BIT flash PEROM |
Turbo IC |
6 |
29C021TI-3 |
High speed CMOS. 2 Megabit programmable and erasable ROM. 256K x 8 bit flash PEROM. Access time 250 ns. |
Turbo IC |
7 |
6R1TI30Y-080 |
Diode and tyristor module |
COLLMER SEMICONDUCTOR INC |
8 |
6R1TI30Y-080 |
DIODE AND TYRISTOR MODULE |
Fuji Electric |
9 |
AT49LV008-11TI |
8-Megabit 1M x 8 3-volt Only Flash Memory |
Atmel |
10 |
BS616LV2011TI |
Very Low Power/Voltage CMOS SRAM 128K X 16 bit |
Brilliance Semiconductor |
11 |
BS616UV2011TI |
Ultra Low Power/Voltage CMOS SRAM 128K X 16 bit |
Brilliance Semiconductor |
12 |
BS62LV2001TI |
Very Low Power/Voltage CMOS SRAM 256K X 8 bit |
Brilliance Semiconductor |
13 |
BS62LV2001TI-10 |
Very low power/voltage CMOS SRAM 256K X 8 bit, 100ns |
Brilliance Semiconductor |
14 |
BS62LV2001TI-70 |
Very low power/voltage CMOS SRAM 256K X 8 bit, 70ns |
Brilliance Semiconductor |
15 |
BS62LV4001TI |
Low Power/Voltage CMOS SRAM 512K X 8 bit |
Brilliance Semiconductor |
16 |
BS62UV2001TI |
Ultra Low Power/Voltage CMOS SRAM 256K X 8 bit |
Brilliance Semiconductor |
17 |
CAT28F001TI-12BT |
120ns 1M-bit CMOS boot block flash memory |
Catalyst Semiconductor |
18 |
CAT28F001TI-12TT |
120ns 1M-bit CMOS boot block flash memory |
Catalyst Semiconductor |
19 |
CAT28F001TI-15BT |
150ns 1M-bit CMOS boot block flash memory |
Catalyst Semiconductor |
20 |
CAT28F001TI-15TT |
150ns 1M-bit CMOS boot block flash memory |
Catalyst Semiconductor |
21 |
CAT28F001TI-70BT |
70ns 1M-bit CMOS boot block flash memory |
Catalyst Semiconductor |
22 |
CAT28F001TI-70TT |
70ns 1M-bit CMOS boot block flash memory |
Catalyst Semiconductor |
23 |
CAT28F001TI-90BT |
90ns 1M-bit CMOS boot block flash memory |
Catalyst Semiconductor |
24 |
CAT28F001TI-90TT |
90ns 1M-bit CMOS boot block flash memory |
Catalyst Semiconductor |
25 |
DPM001TI |
POWER MODULE |
Daewoo Semiconductor |
26 |
EPC1441TI32 |
Configuration devices for SRAM-based LUT devices, 440,800 � 1-bit device with 5.0-V or 3.3-V operation |
Altera Corporation |
27 |
MX23L1611TI-12 |
Access time: 120; 3.3 volt, 16-Mbit (2M x 8/1M x 16) mask ROM with page mode |
Macronix International |
28 |
MX29LV081TI-70 |
8M-BIT [1M x 8] CMOS SINGLE VOLTAGE 3V ONLY EQUAL SECTOR FLASH MEMORY |
Macronix International |
29 |
MX29LV081TI-90 |
8M-BIT [1M x 8] CMOS SINGLE VOLTAGE 3V ONLY EQUAL SECTOR FLASH MEMORY |
Macronix International |
30 |
PL602-21TI-R |
Clock and Timing - Clock Generation |
Microchip |
| | | |