No. |
Part Name |
Description |
Manufacturer |
1 |
EEHZK1V181P |
Conductive Polymer Hybrid Aluminum Electrolytic Capacitors ZK (High temp. reflow) |
Panasonic |
2 |
EEHZK1V181V |
Conductive Polymer Hybrid Aluminum Electrolytic Capacitors ZK (High temp. reflow) |
Panasonic |
3 |
EEUFB1V181 |
Aluminum Electrolytic Capacitors (Radial Lead Type) FB-A |
Panasonic |
4 |
EEUFB1V181B |
Aluminum Electrolytic Capacitors (Radial Lead Type) FB-A |
Panasonic |
5 |
EEUFB1V181E |
Aluminum Electrolytic Capacitors (Radial Lead Type) FB-A |
Panasonic |
6 |
EEUFC1V181 |
Aluminum Electrolytic Capacitors (Radial Lead Type) FC-A |
Panasonic |
7 |
EEUFC1V181B |
Aluminum Electrolytic Capacitors (Radial Lead Type) FC-A |
Panasonic |
8 |
EEUFC1V181E |
Aluminum Electrolytic Capacitors (Radial Lead Type) FC-A |
Panasonic |
9 |
EEUFK1V181 |
Aluminum Electrolytic Capacitors (Radial Lead Type) FK-A |
Panasonic |
10 |
EEUFK1V181B |
Aluminum Electrolytic Capacitors (Radial Lead Type) FK-A |
Panasonic |
11 |
EEUFK1V181E |
Aluminum Electrolytic Capacitors (Radial Lead Type) FK-A |
Panasonic |
12 |
EEUFR1V181 |
Aluminum Electrolytic Capacitors (Radial Lead Type) FR-A |
Panasonic |
13 |
EEUFR1V181B |
Aluminum Electrolytic Capacitors (Radial Lead Type) FR-A |
Panasonic |
14 |
GM71V18163C |
1,048,576 WORDS x 16 BIT CMOS DYNAMIC RAM |
Hynix Semiconductor |
15 |
GM71V18163C-5 |
1,048,576 WORDS x 16 BIT CMOS DYNAMIC RAM |
Hynix Semiconductor |
16 |
GM71V18163C-6 |
1,048,576 WORDS x 16 BIT CMOS DYNAMIC RAM |
Hynix Semiconductor |
17 |
GM71V18163C-7 |
1,048,576 WORDS x 16 BIT CMOS DYNAMIC RAM |
Hynix Semiconductor |
18 |
GM71V18163CJ-5 |
1M words x 16 bit CMOS dynamic RAM, 3.3V, 50ns |
Hynix Semiconductor |
19 |
GM71V18163CJ-6 |
1M words x 16 bit CMOS dynamic RAM, 3.3V, 60ns |
Hynix Semiconductor |
20 |
GM71V18163CJ-7 |
1M words x 16 bit CMOS dynamic RAM, 3.3V, 70ns |
Hynix Semiconductor |
21 |
GM71V18163CL-5 |
1,048,576 WORDS x 16 BIT CMOS DYNAMIC RAM |
Hynix Semiconductor |
22 |
GM71V18163CL-6 |
1,048,576 WORDS x 16 BIT CMOS DYNAMIC RAM |
Hynix Semiconductor |
23 |
GM71V18163CL-7 |
1,048,576 WORDS x 16 BIT CMOS DYNAMIC RAM |
Hynix Semiconductor |
24 |
GM71V18163CLJ-5 |
1M words x 16 bit CMOS dynamic RAM, 3.3V, 50ns |
Hynix Semiconductor |
25 |
GM71V18163CLJ-6 |
1M words x 16 bit CMOS dynamic RAM, 3.3V, 60ns |
Hynix Semiconductor |
26 |
GM71V18163CLJ-7 |
1M words x 16 bit CMOS dynamic RAM, 3.3V, 70ns |
Hynix Semiconductor |
27 |
HY51V18163HGJ |
1M x 16Bit EDO DRAM |
Hynix Semiconductor |
28 |
HY51V18163HGJ-5 |
1M x 16Bit EDO DRAM |
Hynix Semiconductor |
29 |
HY51V18163HGJ-6 |
1M x 16Bit EDO DRAM |
Hynix Semiconductor |
30 |
HY51V18163HGJ-7 |
1M x 16Bit EDO DRAM |
Hynix Semiconductor |
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