| No. |
Part Name |
Description |
Manufacturer |
| 1 |
CYM1846V33 |
512K x 32 3.3V Static RAM Module |
Cypress |
| 2 |
CYM1846V33P8-15C |
512K x 32 3.3V Static RAM Module |
Cypress |
| 3 |
CYM1851V33 |
1,024K x 32 3.3V Static RAM Module |
Cypress |
| 4 |
CYM1851V33PM-15C |
1,024K x 32 3.3V Static RAM Module |
Cypress |
| 5 |
CYM1861AV33 |
2,048K x 32 3.3V Static RAM Module |
Cypress |
| 6 |
CYM1861AV33PM-20C |
2,048K x 32 3.3V Static RAM Module |
Cypress |
| 7 |
CYM1861AV33PM-25C |
2,048K x 32 3.3V Static RAM Module |
Cypress |
| 8 |
IDT71V632SA4PF |
64K x 32 3.3V Synchronous SRAM Pipelined Outputs Burst Counter/ Single Cycle Deselect |
IDT |
| 9 |
IDT71V632SA4PFI |
64K x 32 3.3V Synchronous SRAM Pipelined Outputs Burst Counter/ Single Cycle Deselect |
IDT |
| 10 |
IDT71V633S11PFI |
64K x 32 3.3V Synchronous SRAM Flow-Through Outputs Burst Counter, Single Cycle Deselect |
IDT |
| 11 |
IDT71V633S12PFI |
64K x 32 3.3V Synchronous SRAM Flow-Through Outputs Burst Counter, Single Cycle Deselect |
IDT |
| 12 |
MAX6710AUT-T |
In1 5 V, In2 3.3 V, In3 2.5 V, Low-voltage, high-accuracy, triple/quad voltage mP supervisory circuit |
MAXIM - Dallas Semiconductor |
| 13 |
MAX6710BUT-T |
In1 5 V, In2 3.3 V, In3 2.5 V, Low-voltage, high-accuracy, triple/quad voltage mP supervisory circuit |
MAXIM - Dallas Semiconductor |
| 14 |
MAX6710CUT-T |
In1 5 V, In2 3.3 V, In3 1.8 V, Low-voltage, high-accuracy, triple/quad voltage mP supervisory circuit |
MAXIM - Dallas Semiconductor |
| 15 |
MAX6710DUT-T |
In1 5 V, In2 3.3 V, In3 1.8 V, Low-voltage, high-accuracy, triple/quad voltage mP supervisory circuit |
MAXIM - Dallas Semiconductor |
| 16 |
MAX6710EUT-T |
In1 adj V, In2 3.3 V, In3 2.5 V, Low-voltage, high-accuracy, triple/quad voltage mP supervisory circuit |
MAXIM - Dallas Semiconductor |
| 17 |
MAX6710FUT-T |
In1 adj V, In2 3.3 V, In3 2.5 V, Low-voltage, high-accuracy, triple/quad voltage mP supervisory circuit |
MAXIM - Dallas Semiconductor |
| 18 |
MAX6710GUT-T |
In1 5 V, In2 3.3 V, In3 adj , Low-voltage, high-accuracy, triple/quad voltage mP supervisory circuit |
MAXIM - Dallas Semiconductor |
| 19 |
MAX6710HUT-T |
In1 5 V, In2 3.3 V, In3 adj , Low-voltage, high-accuracy, triple/quad voltage mP supervisory circuit |
MAXIM - Dallas Semiconductor |
| 20 |
MAX6710IUT-T |
In1 adj, In2 3.3 V, In3 2.5 V , Low-voltage, high-accuracy, triple/quad voltage mP supervisory circuit |
MAXIM - Dallas Semiconductor |
| 21 |
MAX6710JUT-T |
In1 adj, In2 3.3 V, In3 2.5 V , Low-voltage, high-accuracy, triple/quad voltage mP supervisory circuit |
MAXIM - Dallas Semiconductor |
| 22 |
MAX6710KUT-T |
In1 adj, In2 3.3 V, In3 1.8 V , Low-voltage, high-accuracy, triple/quad voltage mP supervisory circuit |
MAXIM - Dallas Semiconductor |
| 23 |
MAX6710LUT-T |
In1 adj, In2 3.3 V, In3 1.8 V , Low-voltage, high-accuracy, triple/quad voltage mP supervisory circuit |
MAXIM - Dallas Semiconductor |
| 24 |
MAX6715UTLTD3-T |
Vcc1 4.625 V,Vcc2 3.075 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit |
MAXIM - Dallas Semiconductor |
| 25 |
WS512K32NBV-15 |
512Kx32 3.3V SRAM MODULE |
White Microelectronics |
| 26 |
WS512K32NBV-15G2 |
512Kx32 3.3V SRAM MODULE |
White Microelectronics |
| 27 |
WS512K32NBV-15G2CE |
512Kx32 3.3V SRAM MODULE |
White Microelectronics |
| 28 |
WS512K32NBV-15G2CEA |
512Kx32 3.3V SRAM MODULE |
White Microelectronics |
| 29 |
WS512K32NBV-15G2IE |
512Kx32 3.3V SRAM MODULE |
White Microelectronics |
| 30 |
WS512K32NBV-15G2IEA |
512Kx32 3.3V SRAM MODULE |
White Microelectronics |
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