| No. |
Part Name |
Description |
Manufacturer |
| 1 |
DA3X105D |
Silicon epitaxial planar type - For high speed switching circuits - 2 elements anode-common type |
Panasonic |
| 2 |
L132CB_2GD |
1.8 x 5.3 mm, 2 elements LED array. Green. Lens type green diffused. |
Kingbright Electronic |
| 3 |
L132CB_2HD |
1.8 x 5.3 mm, 2 elements LED array. Bright red. Lens type red diffused. |
Kingbright Electronic |
| 4 |
L132CB_2ID |
1.8 x 5.3 mm, 2 elements LED array. High effiency red. Lens type red diffused. |
Kingbright Electronic |
| 5 |
L132CB_2YD |
1.8 x 5.3 mm, 2 elements LED array. Yellow. Lens type yellow diffused. |
Kingbright Electronic |
| 6 |
M293 |
EPM 32 ELECTRONIC PROGRAM MEMORY FOR 32 STATIONS |
ST Microelectronics |
| 7 |
M293B1 |
V(dd): -0.3 to +7V; 1W; EPM 32 electronic program memory for 32 stations |
SGS Thomson Microelectronics |
| 8 |
M293B1 |
EPM 32 ELECTRONIC PROGRAM MEMORY FOR 32 STATIONS |
ST Microelectronics |
| 9 |
STEVAL-IFP021V1 |
5 V and 12 V power line protection based on STEF05 and STEF12 electronic fuses |
ST Microelectronics |
| 10 |
UPA800T |
HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD |
NEC |
| 11 |
UPA800T-T1 |
HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD |
NEC |
| 12 |
UPA802T |
HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD |
NEC |
| 13 |
UPA802T-T1 |
HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD |
NEC |
| 14 |
UPA803 |
NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD |
NEC |
| 15 |
UPA803T |
NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD |
NEC |
| 16 |
UPA803T-T1 |
NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD |
NEC |
| 17 |
UPA805 |
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD |
NEC |
| 18 |
UPA805T |
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD |
NEC |
| 19 |
UPA805T-T1 |
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD |
NEC |
| 20 |
UPA806 |
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD |
NEC |
| 21 |
UPA806T |
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD |
NEC |
| 22 |
UPA806T-T1 |
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD |
NEC |
| 23 |
UPA807 |
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS SUPER MINI MOLD |
NEC |
| 24 |
UPA807T |
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS SUPER MINI MOLD |
NEC |
| 25 |
UPA807T-T1 |
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS SUPER MINI MOLD |
NEC |
| 26 |
UPA808 |
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS SUPER MINI MOLD |
NEC |
| 27 |
UPA808T |
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS SUPER MINI MOLD |
NEC |
| 28 |
UPA808T-T1 |
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS SUPER MINI MOLD |
NEC |
| 29 |
UPA809 |
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD |
NEC |
| 30 |
UPA809T |
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD |
NEC |
| | | |
