| No. |
Part Name |
Description |
Manufacturer |
| 1 |
2023-1.5 |
1.5 W, 22 V, 2-2.3 GHz, microwave-bipolar |
Acrian |
| 2 |
2023-1.5-2 |
1.5 W, 22 V, 2-2.3 GHz, microwave-bipolar |
Acrian |
| 3 |
2023-12 |
12 W, 24 V, 2-2.3 GHz, microwave-bipolar |
Acrian |
| 4 |
2023-12-2 |
12 W, 24 V, 2-2.3 GHz, microwave-bipolar |
Acrian |
| 5 |
2023-16 |
16 W, 24 V, 2-2.3 GHz, microwave-bipolar |
Acrian |
| 6 |
2023-16-2 |
16 W, 24 V, 2-2.3 GHz, microwave-bipolar |
Acrian |
| 7 |
2023-3 |
3 W, 24 V, 2-2.3 GHz, microwave-bipolar |
Acrian |
| 8 |
2023-3-2 |
3 W, 24 V, 2-2.3 GHz, microwave-bipolar |
Acrian |
| 9 |
2223-10 |
2.2-2.3GHz 10W 24V NPN silicon transistor designed for microwave applications |
SGS Thomson Microelectronics |
| 10 |
2223-14 |
Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz |
SGS Thomson Microelectronics |
| 11 |
2223-18 |
2.2-2.3GHz 18W 24V NPN silicon transistor designed for microwave applications |
SGS Thomson Microelectronics |
| 12 |
2223-3 |
2.2-2.3GHz 3W 24V NPN silicon transistor designed for microwave applications |
SGS Thomson Microelectronics |
| 13 |
82223-12 |
Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz |
SGS Thomson Microelectronics |
| 14 |
82223-18 |
Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz |
SGS Thomson Microelectronics |
| 15 |
82223-20 |
Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz |
SGS Thomson Microelectronics |
| 16 |
82223-4 |
Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz |
SGS Thomson Microelectronics |
| 17 |
AM82223-004 |
Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz |
SGS Thomson Microelectronics |
| 18 |
AM82223-012 |
Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz |
SGS Thomson Microelectronics |
| 19 |
AM82223-014 |
Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz |
SGS Thomson Microelectronics |
| 20 |
AM82223-018 |
Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz |
SGS Thomson Microelectronics |
| 21 |
AM82223-020 |
Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz |
SGS Thomson Microelectronics |
| 22 |
BR42-2.4KXX-26V |
Relays |
Microsemi |
| 23 |
D64H4Y2-2.50KHZ |
32-Pin DIP 4 - Pole Filters |
Frequency Devices |
| 24 |
D64L4Y2-2.50KHZ |
32-Pin DIP 4 - Pole Filters |
Frequency Devices |
| 25 |
DP64H4Y2-2.50KHZ |
32-Pin DIP 4 - Pole Filters |
Frequency Devices |
| 26 |
DP64L4Y2-2.50KHZ |
32-Pin DIP 4 - Pole Filters |
Frequency Devices |
| 27 |
HNC2-2.5P-10DS |
2.5mm Pitch Connector for Discrete Wire Connection |
Hirose Electric |
| 28 |
HNC2-2.5P-10DSL |
2.5mm Pitch Connector for Discrete Wire Connection |
Hirose Electric |
| 29 |
HNC2-2.5P-15DS |
2.5mm Pitch Connector for Discrete Wire Connection |
Hirose Electric |
| 30 |
HNC2-2.5P-15DSL |
2.5mm Pitch Connector for Discrete Wire Connection |
Hirose Electric |
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