No. |
Part Name |
Description |
Manufacturer |
1 |
AIC1720-33 |
100mA Low Dropout Linear Regulator |
Analog Integrations Corporation |
2 |
AIC1720-33CS |
100mA Low Dropout Linear Regulator |
Analog Integrations Corporation |
3 |
AIC1720-33CX |
100mA Low Dropout Linear Regulator |
Analog Integrations Corporation |
4 |
AIC1720-33CZL |
100mA Low Dropout Linear Regulator |
Analog Integrations Corporation |
5 |
AIC1720-33CZT |
100mA Low Dropout Linear Regulator |
Analog Integrations Corporation |
6 |
CHA2098RBF |
20-33GHz High Gain Buffer Amplifier |
United Monolithic Semiconductors |
7 |
CHA2098RBF/24 |
20-33GHz High Gain Buffer Amplifier |
United Monolithic Semiconductors |
8 |
CHA3092 |
20-33GHz Medium Power Amplifier |
United Monolithic Semiconductors |
9 |
CHA3092-99F/00 |
20-33GHz Medium Power Amplifier |
United Monolithic Semiconductors |
10 |
CHA3092RBF |
20-33GHz Medium Power Amplifier |
United Monolithic Semiconductors |
11 |
CHA3092RBF/24 |
20-33GHz Medium Power Amplifier |
United Monolithic Semiconductors |
12 |
FSLM2520-330-J |
Wirewound Chip Inductors |
TOKO |
13 |
FSLM2520-330-K |
Wirewound Chip Inductors |
TOKO |
14 |
LX8820-33CLM |
Low Drop Out Regulator - Positive Fixed |
Microsemi |
15 |
LX8820-33CLMT |
3.3V/1.2A ultra low dropout regulator. Output V: 3.3V. |
Microsemi |
16 |
MAF-1220-33 |
Equipment Designed to Conform EMI Regulations Such As VCCI,CISPR,FCC,VDE,etc |
DENSEI-LAMBDA |
17 |
MAS1220-33 |
Equipment Designed to Conform EMI Regulations Such As VCCI,CISPR,FCC,VDE,etc |
DENSEI-LAMBDA |
18 |
MOS6020-332MXB |
SMT Power Inductor |
etc |
19 |
MOS6020-332MXC |
SMT Power Inductor |
etc |
20 |
MOS6020-332MXD |
SMT Power Inductor |
etc |
21 |
MOS6020-333MXB |
SMT Power Inductor |
etc |
22 |
MOS6020-333MXC |
SMT Power Inductor |
etc |
23 |
MOS6020-333MXD |
SMT Power Inductor |
etc |
24 |
MOS6020-334MXB |
SMT Power Inductor |
etc |
25 |
MOS6020-334MXC |
SMT Power Inductor |
etc |
26 |
MOS6020-334MXD |
SMT Power Inductor |
etc |
27 |
MXB-1220-33 |
Wide band, High attenuation by 2-stage choke coil |
DENSEI-LAMBDA |
28 |
MYB-1220-33 |
High attenuation effect against high voltage pulse noise by amorphous core |
DENSEI-LAMBDA |
29 |
MZS1220-33 |
Equipment Designed to Conform EMI Regulations Such As VCCI,CISPR,FCC,VDE,etc |
DENSEI-LAMBDA |
30 |
PH1920-33 |
1930-1990 MHz,33 W, wireless bipolar power transistor |
MA-Com |
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