| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1.5KE200 |
Transient voltage suppressor. 1500 W. Breakdown voltage 180.0 V(min), 220.0 V(max). Test current 1.0 mA. |
Shanghai Sunrise Electronics |
| 2 |
1.5KE200C |
Transient voltage suppressor. 1500 W. Breakdown voltage 180.0 V(min), 220.0 V(max). Test current 1.0 mA. |
Shanghai Sunrise Electronics |
| 3 |
1.5KE400CA |
Transient voltage suppressor. 1500 W. Breakdown voltage 380.0 V(min), 420.0 V(max). Test current 1.0 mA. |
Shanghai Sunrise Electronics |
| 4 |
1N4747 |
1 W silicon zener diode. Nominal zener voltage 20.0 V. |
Fairchild Semiconductor |
| 5 |
1N5250 |
500 mW silicon zener diode. Nominal zener voltage 20.0 V. |
Fairchild Semiconductor |
| 6 |
1N5540A |
0.4 W, low voltage avalanche diode. Nominal zener voltage 20.0 V. Test current 1.0 mAdc. +-10% tolerance. |
Jinan Gude Electronic Device |
| 7 |
1N5540B |
0.4 W, low voltage avalanche diode. Nominal zener voltage 20.0 V. Test current 1.0 mAdc. +-5% tolerance. |
Jinan Gude Electronic Device |
| 8 |
1N968 |
500 mW silicon planar zener diode. Max zener voltage 20.0 V. |
Fairchild Semiconductor |
| 9 |
BUK7M20-40H |
N-channel 40 V, 20.0 mΩ standard level MOSFET in LFPAK33 |
Nexperia |
| 10 |
BUK9M20-40H |
N-channel 40 V, 20.0 mΩ logic level MOSFET in LFPAK33 |
Nexperia |
| 11 |
CMM-10 |
2.0 TO 20.0 GHz GAAS MMIC POWER AMPLIFIER |
CELERITEK |
| 12 |
HMC347 |
GaAs MMIC SPDT NON-REFLECTIVE SWITCH, DC - 20.0 GHz |
Hittite Microwave Corporation |
| 13 |
HMC460 |
GaAs PHEMT MMIC LOW NOISE AMPLIFIER, DC - 20.0 GHz |
Hittite Microwave Corporation |
| 14 |
HMC462 |
GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 2.0 - 20.0 GHz |
Hittite Microwave Corporation |
| 15 |
HMC462LP5 |
GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 2.0 - 20.0 GHz |
Hittite Microwave Corporation |
| 16 |
HMC463 |
GaAs PHEMT MMIC LOW NOISE AMPLIFIER, DC - 20.0 GHz |
Hittite Microwave Corporation |
| 17 |
HMC463LP5 |
GaAs PHEMT MMIC LOW NOISE AGC AMPLIFIER, 2.0 - 20.0 GHz |
Hittite Microwave Corporation |
| 18 |
HMC464 |
GaAs PHEMT MMIC POWER AMPLIFIER, 2.0 - 20.0 GHz |
Hittite Microwave Corporation |
| 19 |
HMC464LP5 |
GaAs PHEMT MMIC POWER AMPLIFIER, 2.0 - 20.0 GHz |
Hittite Microwave Corporation |
| 20 |
HMC465 |
GaAs PHEMT MMIC MODULATOR DRIVER AMPLIFIER, DC - 20.0 GHz |
Hittite Microwave Corporation |
| 21 |
HMC465LP5 |
GaAs PHEMT MMIC MODULATOR DRIVER AMPLIFIER, DC - 20.0 GHz |
Hittite Microwave Corporation |
| 22 |
HMC547LP3 |
GaAs MMIC SPDT NON-REFLECTIVE SWITCH, DC - 20.0 GHz |
Hittite Microwave Corporation |
| 23 |
MA2200-A |
Si planar. Stabilized power supply. Nom zener voltage 20.0 V. |
Panasonic |
| 24 |
MA2200-B |
Si planar. Stabilized power supply. Nom zener voltage 20.0 V. |
Panasonic |
| 25 |
MMBZ5226B |
Surface nount zener diode. 350 mW. Nominal zen. Vltg @ Izt Vz 3.3 V. Test current 20.0 mA. |
Chenyi Electronics |
| 26 |
MMBZ5227B |
Surface nount zener diode. 350 mW. Nominal zen. Vltg @ Izt Vz 3.6 V. Test current 20.0 mA. |
Chenyi Electronics |
| 27 |
MMBZ5228B |
Surface nount zener diode. 350 mW. Nominal zen. Vltg @ Izt Vz 3.9 V. Test current 20.0 mA. |
Chenyi Electronics |
| 28 |
MMBZ5229B |
Surface nount zener diode. 350 mW. Nominal zen. Vltg @ Izt Vz 4.3 V. Test current 20.0 mA. |
Chenyi Electronics |
| 29 |
MMBZ5230B |
Surface nount zener diode. 350 mW. Nominal zen. Vltg @ Izt Vz 4.7 V. Test current 20.0 mA. |
Chenyi Electronics |
| 30 |
MMBZ5231B |
Surface nount zener diode. 350 mW. Nominal zen. Vltg @ Izt Vz 5.1 V. Test current 20.0 mA. |
Chenyi Electronics |
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