| No. |
Part Name |
Description |
Manufacturer |
| 1 |
2N6766 |
Trans MOSFET N-CH 200V 30A 3-Pin(2+Tab) TO-204AE |
New Jersey Semiconductor |
| 2 |
2N6766BX5 |
Trans MOSFET N-CH 200V 30A 3-Pin(2+Tab) TO-204AE |
New Jersey Semiconductor |
| 3 |
30CTH02S |
200V 30A HyperFast Discrete Diode in a D2-Pak package |
International Rectifier |
| 4 |
APT12031JLL |
POWER MOS 7 1200V 30A 0.310 Ohm |
Advanced Power Technology |
| 5 |
APT12040L2LL |
POWER MOS 7 1200V 30A 0.400 Ohm |
Advanced Power Technology |
| 6 |
HFA30PB120 |
1200V 30A HEXFRED Discrete Diode in a TO-247 (2 LEAD) package |
International Rectifier |
| 7 |
IRF250 |
Trans MOSFET N-CH 200V 30A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
| 8 |
IRF250CF |
Trans MOSFET N-CH 200V 30A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
| 9 |
IRF250FI |
Trans MOSFET N-CH 200V 30A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
| 10 |
IRF250R |
Trans MOSFET N-CH 200V 30A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
| 11 |
MUR3020WT |
200V 30A HEXFRED Common Cathode Diode in a TO-247AC package |
International Rectifier |
| 12 |
NGTB30N120IHL |
IGBT 1200V 30A FS1 Induction Heating |
ON Semiconductor |
| 13 |
NGTB30N120IHSW |
IGBT 1200V 30A FS1 Induction Heating |
ON Semiconductor |
| 14 |
NGTB30N120L |
IGBT 1200V 30A FS1 Gen Mkt |
ON Semiconductor |
| 15 |
OM5218SC |
200V 30A Hi-Rel Ultra-Fast Common Cathode Diode in a TO-258AA package |
International Rectifier |
| 16 |
UES2604 |
Diode Switching 200V 30A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
| | | |
