No. |
Part Name |
Description |
Manufacturer |
1 |
2N2369 |
1.200W General Purpose NPN Metal Can Transistor. 15V Vceo, A Ic, 40 - 120 hFE. |
Continental Device India Limited |
2 |
2N2369A |
1.200W General Purpose NPN Metal Can Transistor. 15V Vceo, A Ic, 40 - 120 hFE. |
Continental Device India Limited |
3 |
2N3478 |
0.200W General Purpose NPN Metal Can Transistor. 15V Vceo, 0.050A Ic, 25 - 150 hFE. |
Continental Device India Limited |
4 |
2N5179 |
0.200W General Purpose NPN Metal Can Transistor. 12V Vceo, 0.050A Ic, 25 - 250 hFE. |
Continental Device India Limited |
5 |
2N5745 |
200W PNP Silicon Power Transistor 20A 80V |
Motorola |
6 |
2N6338 |
25A 200W high-power NPN silicon transistor |
Motorola |
7 |
2N6339 |
25A 200W high-power NPN silicon transistor |
Motorola |
8 |
2N6340 |
25A 200W high-power NPN silicon transistor |
Motorola |
9 |
2N6341 |
25A 200W high-power NPN silicon transistor |
Motorola |
10 |
2N6436 |
High-power PNP silicon transistor 200W 80V |
Motorola |
11 |
2N6437 |
High-power PNP silicon transistor 200W 100V |
Motorola |
12 |
2N6438 |
High-power PNP silicon transistor 200W 120V |
Motorola |
13 |
2N917 |
0.200W RF NPN Metal Can Transistor. 15V Vceo, 0.050A Ic, 20 - 200 hFE. |
Continental Device India Limited |
14 |
2N918 |
0.200W RF NPN Metal Can Transistor. 15V Vceo, 0.050A Ic, 20 hFE. |
Continental Device India Limited |
15 |
AN831 |
MAGNETIC SNUBBER FOR 200W PFC WITH UNIVERSAL MAINS |
SGS Thomson Microelectronics |
16 |
APP NOTE |
Application Note - a 50KHz 200W Half-Bridge Switching Power Supply Using Ring Emitter Transistors |
Fujitsu Microelectronics |
17 |
BC477 |
1.200W General Purpose PNP Metal Can Transistor. 80V Vceo, 0.100A Ic, 30 hFE. |
Continental Device India Limited |
18 |
BD364 |
20A complementary silicon 200W power NPN transistor |
Motorola |
19 |
BD365 |
20A complementary silicon 200W power PNP transistor |
Motorola |
20 |
BD366 |
20A complementary silicon 200W power NPN transistor |
Motorola |
21 |
BD367 |
20A complementary silicon 200W power PNP transistor |
Motorola |
22 |
BD368 |
20A complementary silicon 200W power NPN transistor |
Motorola |
23 |
BD369 |
20A complementary silicon 200W power PNP transistor |
Motorola |
24 |
BF173 |
0.200W General Purpose NPN Metal Can Transistor. 25V Vceo, 0.030A Ic, 15 hFE. |
Continental Device India Limited |
25 |
CGHV40200PP |
200W RF Power GaN HEMT |
Wolfspeed |
26 |
CMBA857E |
0.200W General Purpose PNP SMD Transistor. 50V Vceo, 0.200A Ic, 150 - 300 hFE. |
Continental Device India Limited |
27 |
CMBA857F |
0.200W General Purpose PNP SMD Transistor. 50V Vceo, 0.200A Ic, 250 - 500 hFE. |
Continental Device India Limited |
28 |
CMBT857 |
0.200W General Purpose PNP SMD Transistor. 50V Vceo, 0.200A Ic, 90 hFE. |
Continental Device India Limited |
29 |
CMBT857F |
0.200W General Purpose PNP SMD Transistor. 50V Vceo, 0.200A Ic, 250 - 500 hFE. |
Continental Device India Limited |
30 |
CSA1220AO |
1.200W Medium Power PNP Plastic Leaded Transistor. 160V Vceo, 1.200A Ic, 100 - 200 hFE. Complementary CSC2690AO |
Continental Device India Limited |
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