| No. |
Part Name |
Description |
Manufacturer |
| 1 |
2N2369 |
1.200W General Purpose NPN Metal Can Transistor. 15V Vceo, A Ic, 40 - 120 hFE. |
Continental Device India Limited |
| 2 |
2N2369A |
1.200W General Purpose NPN Metal Can Transistor. 15V Vceo, A Ic, 40 - 120 hFE. |
Continental Device India Limited |
| 3 |
2N3478 |
0.200W General Purpose NPN Metal Can Transistor. 15V Vceo, 0.050A Ic, 25 - 150 hFE. |
Continental Device India Limited |
| 4 |
2N5179 |
0.200W General Purpose NPN Metal Can Transistor. 12V Vceo, 0.050A Ic, 25 - 250 hFE. |
Continental Device India Limited |
| 5 |
2N5745 |
200W PNP Silicon Power Transistor 20A 80V |
Motorola |
| 6 |
2N6338 |
25A 200W high-power NPN silicon transistor |
Motorola |
| 7 |
2N6339 |
25A 200W high-power NPN silicon transistor |
Motorola |
| 8 |
2N6340 |
25A 200W high-power NPN silicon transistor |
Motorola |
| 9 |
2N6341 |
25A 200W high-power NPN silicon transistor |
Motorola |
| 10 |
2N917 |
0.200W RF NPN Metal Can Transistor. 15V Vceo, 0.050A Ic, 20 - 200 hFE. |
Continental Device India Limited |
| 11 |
2N918 |
0.200W RF NPN Metal Can Transistor. 15V Vceo, 0.050A Ic, 20 hFE. |
Continental Device India Limited |
| 12 |
AN831 |
MAGNETIC SNUBBER FOR 200W PFC WITH UNIVERSAL MAINS |
SGS Thomson Microelectronics |
| 13 |
BC477 |
1.200W General Purpose PNP Metal Can Transistor. 80V Vceo, 0.100A Ic, 30 hFE. |
Continental Device India Limited |
| 14 |
BD364 |
20A complementary silicon 200W power NPN transistor |
Motorola |
| 15 |
BD365 |
20A complementary silicon 200W power PNP transistor |
Motorola |
| 16 |
BD366 |
20A complementary silicon 200W power NPN transistor |
Motorola |
| 17 |
BD367 |
20A complementary silicon 200W power PNP transistor |
Motorola |
| 18 |
BD368 |
20A complementary silicon 200W power NPN transistor |
Motorola |
| 19 |
BD369 |
20A complementary silicon 200W power PNP transistor |
Motorola |
| 20 |
BF173 |
0.200W General Purpose NPN Metal Can Transistor. 25V Vceo, 0.030A Ic, 15 hFE. |
Continental Device India Limited |
| 21 |
CGHV40200PP |
200W RF Power GaN HEMT |
Wolfspeed |
| 22 |
CMBA857E |
0.200W General Purpose PNP SMD Transistor. 50V Vceo, 0.200A Ic, 150 - 300 hFE. |
Continental Device India Limited |
| 23 |
CMBA857F |
0.200W General Purpose PNP SMD Transistor. 50V Vceo, 0.200A Ic, 250 - 500 hFE. |
Continental Device India Limited |
| 24 |
CMBT857 |
0.200W General Purpose PNP SMD Transistor. 50V Vceo, 0.200A Ic, 90 hFE. |
Continental Device India Limited |
| 25 |
CMBT857F |
0.200W General Purpose PNP SMD Transistor. 50V Vceo, 0.200A Ic, 250 - 500 hFE. |
Continental Device India Limited |
| 26 |
CSA1220AO |
1.200W Medium Power PNP Plastic Leaded Transistor. 160V Vceo, 1.200A Ic, 100 - 200 hFE. Complementary CSC2690AO |
Continental Device India Limited |
| 27 |
CSA1220AR |
1.200W Medium Power PNP Plastic Leaded Transistor. 160V Vceo, 1.200A Ic, 60 - 120 hFE. Complementary CSC2690AR |
Continental Device India Limited |
| 28 |
CSA1220AY |
1.200W Medium Power PNP Plastic Leaded Transistor. 160V Vceo, 1.200A Ic, 160 - 320 hFE. Complementary CSC2690AY |
Continental Device India Limited |
| 29 |
CSA1220O |
1.200W Medium Power PNP Plastic Leaded Transistor. 120V Vceo, 1.200A Ic, 100 - 200 hFE. Complementary CSC2690O |
Continental Device India Limited |
| 30 |
CSA1220R |
1.200W Medium Power PNP Plastic Leaded Transistor. 120V Vceo, 1.200A Ic, 60 - 120 hFE. Complementary CSC2690R |
Continental Device India Limited |
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