No. |
Part Name |
Description |
Manufacturer |
1 |
1214GN-120EL |
GaN Transistors |
Microsemi |
2 |
1416GN-120EL |
GaN Transistors |
Microsemi |
3 |
27C256-20EL |
256K (32K x 8) CMOS EPROM |
Microchip |
4 |
27LC128-20EL |
128K (16K x 8) CMOS EPROM |
Microchip |
5 |
HY57V281620ELT |
128Mb Synchronous DRAM based on 2M x 4Bank x16 I/O |
Hynix Semiconductor |
6 |
HY57V281620ELT-5 |
128Mb Synchronous DRAM based on 2M x 4Bank x16 I/O |
Hynix Semiconductor |
7 |
HY57V281620ELT-6 |
128Mb Synchronous DRAM based on 2M x 4Bank x16 I/O |
Hynix Semiconductor |
8 |
HY57V281620ELT-7 |
128Mb Synchronous DRAM based on 2M x 4Bank x16 I/O |
Hynix Semiconductor |
9 |
HY57V281620ELT-H |
128Mb Synchronous DRAM based on 2M x 4Bank x16 I/O |
Hynix Semiconductor |
10 |
HY57V281620ELTP-6 |
128Mb Synchronous DRAM based on 2M x 4Bank x16 I/O |
Hynix Semiconductor |
11 |
HY57V281620ELTP-7 |
128Mb Synchronous DRAM based on 2M x 4Bank x16 I/O |
Hynix Semiconductor |
12 |
HY57V281620ELTP-H |
128Mb Synchronous DRAM based on 2M x 4Bank x16 I/O |
Hynix Semiconductor |
13 |
MXD2020EL |
Ultra Low Noise, Low offset Drift +1g, -1g Dual Axis Accelerometer with Digital Outputs |
etc |
14 |
PH1214-20EL |
1200-1400 MHz,20 W, 2 ms pulse,radar pulsed power transistor |
MA-Com |
15 |
PHI214-20EL |
Radar Pulsed Power Transistor, 2OW, 2ms Pulse, 10% Duty 1.2 - 1.4 GHz |
Tyco Electronics |
16 |
PMEG10020ELR |
100 V, 2 A low leakage current Schottky barrier rectifier |
Nexperia |
17 |
PMEG6020ELR |
60 V, 2 A low leakage current Schottky barrier rectifier |
Nexperia |
18 |
PMEG6020ELR |
60 V, 2 A low leakage current Schottky barrier rectifier |
NXP Semiconductors |
19 |
PMEG60T20ELP |
60 V, 2 A low leakage current Trench MEGA Schottky barrier rectifier |
Nexperia |
20 |
PMEG60T20ELR |
60 V, 2 A low leakage current Trench MEGA Schottky barrier rectifier |
Nexperia |
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