No. |
Part Name |
Description |
Manufacturer |
1 |
AN1372 |
HOW TO USE M58LW032A AS REPLACEMENT FOR 28F320J3A IN AN ASYNCHRONOUS ENVIRONMENT |
SGS Thomson Microelectronics |
2 |
E28F320J3A-110 |
3 Volt Intel StrataFlash Memory |
Intel |
3 |
GLT41316-20J3 |
64K X 16 CMOS DYNAMIC RAM WITH FAST PAGE MODE |
etc |
4 |
GLT725608-20J3 |
Ultra High Performance 32K x 8 Bit CMOS STATIC RAM |
etc |
5 |
GLT725608-20J3 |
20ns; Ultra high performance 32K x 8 CMOS static RAM |
G-LINK Technology |
6 |
GT20J301 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS |
TOSHIBA |
7 |
GT20J311 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS |
TOSHIBA |
8 |
GT20J321 |
Insulated Gate Bipolar Transistor Silicon N Chanenel IGBT High Power Switching Applications Fast Switching Applications |
TOSHIBA |
9 |
GT20J341 |
Discrete IGBT |
TOSHIBA |
10 |
MT28F320J3 |
Q-FLASHTM MEMORY |
Micron Technology |
11 |
P4C1024-20J3C |
20 ns, static CMOS RAM, 128 K x 8 high speed |
Performance Semiconductor Corporation |
12 |
P4C1024-20J3I |
20 ns, static CMOS RAM, 128 K x 8 high speed |
Performance Semiconductor Corporation |
13 |
RC28F320J3A-110 |
3 Volt Intel StrataFlash Memory |
Intel |
| | | |