| No. |
Part Name |
Description |
Manufacturer |
| 1 |
06621.25HXLL |
LT-5 tm fast-acting fuse. Long lead (bulk) 100 pieces. Ampere rating 1.25, voltage rating 250, nominal resistance cold ohms 45. |
Littelfuse |
| 2 |
06621.25HXSL |
LT-5 tm fast-acting fuse. Short lead (bulk) 100 pieces. Ampere rating 1.25, voltage rating 250, nominal resistance cold ohms 45. |
Littelfuse |
| 3 |
06621.25ZRLL |
LT-5 tm fast-acting fuse. Long lead (tape and reel) 750 pieces. Ampere rating 1.25, voltage rating 250, nominal resistance cold ohms 45. |
Littelfuse |
| 4 |
1.5KE110 |
99.0- 121.0V transient voltage suppressor |
DC Components |
| 5 |
1.5KE150 |
121.00V; 1mA ;1500W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 6 |
1.5KE150C |
1500 Watt peak power transient voltage suppressor. Reverse stand-off voltage VRWM = 121.00 V. Test current IT = 1 mA. |
Bytes |
| 7 |
1N5643 |
Diode TVS Single Uni-Dir 21.8V 1.5KW 2-Pin DO-13 |
New Jersey Semiconductor |
| 8 |
1N6135 |
Diode TVS Single Bi-Dir 121.6V 500W 2-Pin Case G-95 |
New Jersey Semiconductor |
| 9 |
1N6135A |
Diode TVS Single Bi-Dir 121.6V 500W 2-Pin |
New Jersey Semiconductor |
| 10 |
1N6171 |
Diode TVS Single Bi-Dir 121.6V 1.5KW 2-Pin |
New Jersey Semiconductor |
| 11 |
1N6171A |
Diode TVS Single Bi-Dir 121.6V 1.5KW 2-Pin |
New Jersey Semiconductor |
| 12 |
1N6281 |
Diode TVS Single Uni-Dir 21.8V 1.5KW 2-Pin Case 1 |
New Jersey Semiconductor |
| 13 |
1S762H |
Silicon Difused Junction, Zener Diode Vz=17.0...21.0 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
| 14 |
3221.25 |
Axial Lead and Cartridge Fuses |
Littelfuse |
| 15 |
APT5025BN |
POWER MOS IV 500V 23.0A 0.25 Ohm / 500V 21.0A 0.30 Ohm |
Advanced Power Technology |
| 16 |
APT5030BN |
POWER MOS IV 500V 23.0A 0.25 Ohm / 500V 21.0A 0.30 Ohm |
Advanced Power Technology |
| 17 |
AUIRF7640S2 |
60V Automotive Grade Single N-Channel HEXFET Power MOSFET in a DirectFET S2 package rated at 21.0 amperes optimized with low on resistance. |
International Rectifier |
| 18 |
AUIRF7640S2TR |
60V Automotive Grade Single N-Channel HEXFET Power MOSFET in a DirectFET S2 package rated at 21.0 amperes optimized with low on resistance. |
International Rectifier |
| 19 |
AUIRF7640S2TR1 |
60V Automotive Grade Single N-Channel HEXFET Power MOSFET in a DirectFET S2 package rated at 21.0 amperes optimized with low on resistance. |
International Rectifier |
| 20 |
BGD816L |
860 MHz, 21.5 dB gain power doubler amplifier |
NXP Semiconductors |
| 21 |
BGD906 |
860 MHz, 21.5 dB gain power doubler amplifier |
Philips |
| 22 |
BGY687 |
600 MHz, 21.5 dB gain push-pull amplifier |
Philips |
| 23 |
BGY787 |
750 MHz, 21.5 dB gain push-pull amplifier |
NXP Semiconductors |
| 24 |
BGY787 |
750 MHz, 21.5 dB gain push-pull amplifier |
Philips |
| 25 |
BGY887 |
860 MHz, 21.5 dB gain push-pull amplifier |
NXP Semiconductors |
| 26 |
BGY887 |
860 MHz, 21.5 dB gain push-pull amplifier |
Philips |
| 27 |
CGY887 |
CGY887; 870 MHz, 21.5 dB gain push-pull amplifier |
Philips |
| 28 |
CGY887 |
870 MHz, 21.5 dB gain push-pull amplifier |
Philips |
| 29 |
CTA11ACP121.2 |
Switch Ccapacity up to 25A, Small size and light weight, PCB pin qiock connect mounting available |
CIT Relay & Switch |
| 30 |
CTA11ACP121.2D |
Switch Ccapacity up to 25A, Small size and light weight, PCB pin qiock connect mounting available |
CIT Relay & Switch |
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