| No. |
Part Name |
Description |
Manufacturer |
| 1 |
AS6UA51216-BC |
1.65V to 3.6V 512K x 16 Intelliwatt low-power CMOS SRAM with one chip enable |
Alliance Semiconductor |
| 2 |
AS6UA51216-BI |
1.65V to 3.6V 512K x 16 Intelliwatt low-power CMOS SRAM with one chip enable |
Alliance Semiconductor |
| 3 |
AT3216-B2R7HAAB |
Multilayer Chip Antenna |
etc |
| 4 |
AT3216-B2R7HAAB/LF |
Multilayer Chip Antenna |
etc |
| 5 |
AT3216-B2R7HAAT |
Multilayer Chip Antenna |
etc |
| 6 |
AT3216-B2R7HAAT/LF |
Multilayer Chip Antenna |
etc |
| 7 |
M5M29GB |
16 /777 /216-BIT (1048 /576-WORD BY16-BIT) CMOS 3.3V-ONLY / BLOCK ERASE FLASH MEMORY |
Mitsubishi Electric Corporation |
| 8 |
M5M29GB160BVP |
16 /777 /216-BIT (2097 /152-WORD BY 8-BIT / 1048 /576-WORD BY16-BIT)CMOS 3.3V-ONLY / BLOCK ERASE FLASH MEMORY |
Mitsubishi Electric Corporation |
| 9 |
M5M29GB160BVP-80 |
16,777,216-BIT (2097,152-WORD BY 8-BIT / 1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY |
Mitsubishi Electric Corporation |
| 10 |
M5M29GB160BWG |
16,777,216-bit (1048,576-word by 16-bit) CMOS 3.3V-only, block erase flash memory |
Mitsubishi Electric Corporation |
| 11 |
M5M29GB161BVP |
16777216-bit CMOS 3.3V-only, block erase flash memory |
Mitsubishi Electric Corporation |
| 12 |
M5M29GB161BWG |
16,777,216-BIT (1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY |
Mitsubishi Electric Corporation |
| 13 |
M5M29GB161BWG |
16,777,216-BIT (1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY |
Mitsubishi Electric Corporation |
| 14 |
M5M29GT160BVP |
16 /777 /216-BIT (2097 /152-WORD BY 8-BIT / 1048 /576-WORD BY16-BIT)CMOS 3.3V-ONLY / BLOCK ERASE FLASH MEMORY |
Mitsubishi Electric Corporation |
| 15 |
M5M29GT160BVP-80 |
16,777,216-BIT (2097,152-WORD BY 8-BIT / 1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY |
Mitsubishi Electric Corporation |
| 16 |
M5M29GT160BWG |
16,777,216-bit (1048,576-word by 16-bit) CMOS 3.3V-only, block erase flash memory |
Mitsubishi Electric Corporation |
| 17 |
M5M29GT161BVP |
16777216-bit CMOS 3.3V-only, block erase flash memory |
Mitsubishi Electric Corporation |
| 18 |
M5M29GT161BVP-80 |
16777216-bit CMOS 3.3V-only, block erase flash memory |
Mitsubishi Electric Corporation |
| 19 |
M5M29GT161BWG |
16,777,216-BIT (1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY |
Mitsubishi Electric Corporation |
| 20 |
M5M29GT161BWG |
16,777,216-BIT (1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY |
Mitsubishi Electric Corporation |
| 21 |
M5M417400CJ |
FAST PAGE MODE 16777216-BIT (4194304-WORD BY 4-BIT) DYNAMIC RAM |
Mitsubishi Electric Corporation |
| 22 |
M5M417400CJ-5 |
FAST PAGE MODE 16777216-BIT (4194304-WORD BY 4-BIT) DYNAMIC RAM |
Mitsubishi Electric Corporation |
| 23 |
M5M417400CJ-5S |
FAST PAGE MODE 16777216-BIT (4194304-WORD BY 4-BIT) DYNAMIC RAM |
Mitsubishi Electric Corporation |
| 24 |
M5M417400CJ-6 |
FAST PAGE MODE 16777216-BIT (4194304-WORD BY 4-BIT) DYNAMIC RAM |
Mitsubishi Electric Corporation |
| 25 |
M5M417400CJ-6S |
FAST PAGE MODE 16777216-BIT (4194304-WORD BY 4-BIT) DYNAMIC RAM |
Mitsubishi Electric Corporation |
| 26 |
M5M417400CJ-7 |
FAST PAGE MODE 16777216-BIT (4194304-WORD BY 4-BIT) DYNAMIC RAM |
Mitsubishi Electric Corporation |
| 27 |
M5M417400CJ-7S |
FAST PAGE MODE 16777216-BIT (4194304-WORD BY 4-BIT) DYNAMIC RAM |
Mitsubishi Electric Corporation |
| 28 |
M5M417400CTP-5 |
FAST PAGE MODE 16777216-BIT (4194304-WORD BY 4-BIT) DYNAMIC RAM |
Mitsubishi Electric Corporation |
| 29 |
M5M417400CTP-5S |
FAST PAGE MODE 16777216-BIT (4194304-WORD BY 4-BIT) DYNAMIC RAM |
Mitsubishi Electric Corporation |
| 30 |
M5M417400CTP-6 |
FAST PAGE MODE 16777216-BIT (4194304-WORD BY 4-BIT) DYNAMIC RAM |
Mitsubishi Electric Corporation |
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