| No. |
Part Name |
Description |
Manufacturer |
| 1 |
A3121LT |
HALL-EFFECT SWITCHES FOR HIGH-TEMPERATURE OPERATION |
Allegro MicroSystems |
| 2 |
BAS21LT1 |
High Voltage Switching Diode |
Leshan Radio Company |
| 3 |
BAS21LT1 |
CASE 318 08, STYLE 8 SOT 23 (TO 236AB) |
Motorola |
| 4 |
BAS21LT1 |
High Voltage Switching Diode |
ON Semiconductor |
| 5 |
BAS21LT3 |
High Voltage Switching Diode |
ON Semiconductor |
| 6 |
H21LTB |
OPTOLOGIC � OPTICAL INTERRUPTER SWITCH |
Fairchild Semiconductor |
| 7 |
H21LTI |
OPTOLOGIC � OPTICAL INTERRUPTER SWITCH |
Fairchild Semiconductor |
| 8 |
IPS021LTR |
Intelligent Power Switch 1 Channel Low Side Driver in a SOT-223 Package |
International Rectifier |
| 9 |
IRSF3021LTR |
Intelligent Power Switch 1 Channel Low Side Driver in a SOT-223 Package |
International Rectifier |
| 10 |
MAX16021LTEL+ |
Low-Power μP Supervisory Circuits with Battery-Backup Circuit and Chip-Enable Gating |
MAXIM - Dallas Semiconductor |
| 11 |
MAX16021LTEM+ |
Low-Power μP Supervisory Circuits with Battery-Backup Circuit and Chip-Enable Gating |
MAXIM - Dallas Semiconductor |
| 12 |
MAX16021LTER+ |
Low-Power μP Supervisory Circuits with Battery-Backup Circuit and Chip-Enable Gating |
MAXIM - Dallas Semiconductor |
| 13 |
MAX16021LTER+T |
Low-Power μP Supervisory Circuits with Battery-Backup Circuit and Chip-Enable Gating |
MAXIM - Dallas Semiconductor |
| 14 |
MAX16021LTES+ |
Low-Power μP Supervisory Circuits with Battery-Backup Circuit and Chip-Enable Gating |
MAXIM - Dallas Semiconductor |
| 15 |
MAX16021LTES+T |
Low-Power μP Supervisory Circuits with Battery-Backup Circuit and Chip-Enable Gating |
MAXIM - Dallas Semiconductor |
| 16 |
MAX16021LTET+ |
Low-Power μP Supervisory Circuits with Battery-Backup Circuit and Chip-Enable Gating |
MAXIM - Dallas Semiconductor |
| 17 |
MAX16021LTET+T |
Low-Power μP Supervisory Circuits with Battery-Backup Circuit and Chip-Enable Gating |
MAXIM - Dallas Semiconductor |
| 18 |
MAX16021LTEV+ |
Low-Power μP Supervisory Circuits with Battery-Backup Circuit and Chip-Enable Gating |
MAXIM - Dallas Semiconductor |
| 19 |
MAX16021LTEW+ |
Low-Power μP Supervisory Circuits with Battery-Backup Circuit and Chip-Enable Gating |
MAXIM - Dallas Semiconductor |
| 20 |
MAX16021LTEY+ |
Low-Power μP Supervisory Circuits with Battery-Backup Circuit and Chip-Enable Gating |
MAXIM - Dallas Semiconductor |
| 21 |
MAX16021LTEZ+ |
Low-Power μP Supervisory Circuits with Battery-Backup Circuit and Chip-Enable Gating |
MAXIM - Dallas Semiconductor |
| 22 |
MMBR521LT1 |
HIGH-FREQUENCY TRANSISTOR PNP SILICON |
Motorola |
| 23 |
MMBT6521LT1 |
Amplifier Transistor NPN |
ON Semiconductor |
| 24 |
PT5021LT |
(-)3.3Vout 1A (+)5V-Input Positive To Negative ISR |
Texas Instruments |
| 25 |
PT6521LT |
3.3Vout 8A 5V-Input Adjustable ISR with Short-Circuit Protection |
Texas Instruments |
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