| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1504-450E |
Delay 450 +/-22.5 ns, Fixed dip delay line Td/Tr=5 |
Data Delay Devices Inc |
| 2 |
1504-450G |
Delay 450 +/-22.5 ns, Fixed dip delay line Td/Tr=5 |
Data Delay Devices Inc |
| 3 |
1513-22.5Y |
Delay 22.5 +/-1.2 ns, fixed SIP delay line Td/Tr=5 |
Data Delay Devices Inc |
| 4 |
1513-22.5Y |
Delay 22.5 +/-1.2 ns, fixed SIP delay line Td/Tr=5 |
Data Delay Devices Inc |
| 5 |
1514-22.5Y |
Delay 22.5 +/-1.2 ns, fixed SIP delay line Td/Tr=5 |
Data Delay Devices Inc |
| 6 |
1514-22.5Y |
Delay 22.5 +/-1.2 ns, fixed SIP delay line Td/Tr=5 |
Data Delay Devices Inc |
| 7 |
1N4748 |
22.0V Professional Grade 1 W Zener Diode |
Continental Device India Limited |
| 8 |
1N4748 |
1 W silicon zener diode. Nominal zener voltage 22.0 V. |
Fairchild Semiconductor |
| 9 |
1N4748A |
22.0V Professional Grade 1 W Zener Diode |
Continental Device India Limited |
| 10 |
1N5251 |
500 mW silicon zener diode. Nominal zener voltage 22.0 V. |
Fairchild Semiconductor |
| 11 |
1N5251B |
22.0V 500 mW Zener Diode |
Continental Device India Limited |
| 12 |
1N5541A |
0.4 W, low voltage avalanche diode. Nominal zener voltage 22.0 V. Test current 1.0 mAdc. +-10% tolerance. |
Jinan Gude Electronic Device |
| 13 |
1N5541B |
0.4 W, low voltage avalanche diode. Nominal zener voltage 22.0 V. Test current 1.0 mAdc. +-5% tolerance. |
Jinan Gude Electronic Device |
| 14 |
1N5744B |
22.0V Voltage Reference Diode |
Philips |
| 15 |
1N6117 |
Diode TVS Single Bi-Dir 22.8V 500W 2-Pin Case G-95 |
New Jersey Semiconductor |
| 16 |
1N6117A |
Diode TVS Single Bi-Dir 22.8V 500W 2-Pin |
New Jersey Semiconductor |
| 17 |
1N6153 |
Diode TVS Single Bi-Dir 22.8V 1.5KW 2-Pin |
New Jersey Semiconductor |
| 18 |
1N6153A |
Diode TVS Single Bi-Dir 22.8V 1.5KW 2-Pin |
New Jersey Semiconductor |
| 19 |
1N6379 |
22.00V; 40A ;1500W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 20 |
1N6380 |
22.00V; 40A ;1500W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 21 |
1N6387 |
22.00V; 40A ;1500W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 22 |
1N749 |
500 mW silicon linear diode. Max zener impedance 22.0 Ohm, max zener voltage 4.3 V (Iz 20mA). |
Fairchild Semiconductor |
| 23 |
1N87 |
Diode 22.5V 2-Pin DO-7 |
New Jersey Semiconductor |
| 24 |
1N969 |
22.0V Standard Grade 400 mW Axial Zener Diode |
Continental Device India Limited |
| 25 |
1N969 |
500 mW silicon planar zener diode. Max zener voltage 22.0 V. |
Fairchild Semiconductor |
| 26 |
1N969A |
22.0V Standard Grade 400 mW Axial Zener Diode |
Continental Device India Limited |
| 27 |
1N969B |
22.0V Standard Grade 400 mW Axial Zener Diode |
Continental Device India Limited |
| 28 |
457 |
T-1 3/4 subminiature, miniature grooved lamp. 22.0 volts, 0.04 amps. |
Gilway Technical Lamp |
| 29 |
459 |
T-1 3/4 subminiature, miniature flanged lamp. 22.0 volts, 0.04 amps. |
Gilway Technical Lamp |
| 30 |
7459 |
T-1 3/4 subminiature, bi-pin lamp. 22.0 volts, 0.04 amps. |
Gilway Technical Lamp |
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