| No. |
Part Name |
Description |
Manufacturer |
| 1 |
EN9050 |
N-Channel Power MOSFET, 40V, 100A, 3.9mOhm, TO-220-3L |
ON Semiconductor |
| 2 |
ENA0523 |
N-Channel Power MOSFET, 60V, 100A, 5mOhm, TO-220-3L |
ON Semiconductor |
| 3 |
MAF-1220-33 |
Equipment Designed to Conform EMI Regulations Such As VCCI,CISPR,FCC,VDE,etc |
DENSEI-LAMBDA |
| 4 |
MAS1220-33 |
Equipment Designed to Conform EMI Regulations Such As VCCI,CISPR,FCC,VDE,etc |
DENSEI-LAMBDA |
| 5 |
MXB-1220-33 |
Wide band, High attenuation by 2-stage choke coil |
DENSEI-LAMBDA |
| 6 |
MYB-1220-33 |
High attenuation effect against high voltage pulse noise by amorphous core |
DENSEI-LAMBDA |
| 7 |
MZS1220-33 |
Equipment Designed to Conform EMI Regulations Such As VCCI,CISPR,FCC,VDE,etc |
DENSEI-LAMBDA |
| 8 |
RYC8220-3M |
Poly Switch Power Switch Devices |
Tyco Electronics |
| 9 |
SDP04S60 |
Silicon Carbide Schottky Diodes - 4A diode in TO220-3 package |
Infineon |
| 10 |
SDP06S60 |
Silicon Carbide Schottky Diodes - 6A diode in TO220-3 package |
Infineon |
| 11 |
SDP10S30 |
Silicon Carbide Schottky Diodes - 10A diode in TO220-3 package |
Infineon |
| 12 |
SDP20S30 |
Silicon Carbide Schottky Diodes - 2x10A diode in TO220-3 package |
Infineon |
| 13 |
SKA06N60 |
IGBTs & DuoPacks - 6A 600V TO220-3-31 (Fullpack) IGBT+Diode |
Infineon |
| | | |
