| No. |
Part Name |
Description |
Manufacturer |
| 1 |
2SK2223-01R |
N-channel MOS-FET |
Fuji Electric |
| 2 |
AM82223-010 |
TELEMETRY APPLICATIONS RF & MICROWAVE TRANSISTORS |
SGS Thomson Microelectronics |
| 3 |
AM82223-010 |
TELEMETRY APPLICATIONS RF & MICROWAVE TRANSISTORS |
ST Microelectronics |
| 4 |
AM82223-012 |
Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz |
SGS Thomson Microelectronics |
| 5 |
AM82223-014 |
Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz |
SGS Thomson Microelectronics |
| 6 |
AM82223-018 |
Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz |
SGS Thomson Microelectronics |
| 7 |
SMV30223-01 |
VBR:8V min; 250mW; surface mount 3022/3033 series varactor super hyperabrupt tuning diode for VCXOs |
Knox Semiconductor Inc |
| | | |
