No. |
Part Name |
Description |
Manufacturer |
1 |
1N3569 |
Diode Switching 150V 0.225A 2-Pin DO-35 |
New Jersey Semiconductor |
2 |
1N3570 |
Diode Switching 150V 0.225A 2-Pin DO-35 |
New Jersey Semiconductor |
3 |
1N3571 |
Diode Switching 150V 0.225A 2-Pin DO-35 |
New Jersey Semiconductor |
4 |
1N3572 |
Diode Switching 150V 0.225A 2-Pin DO-35 |
New Jersey Semiconductor |
5 |
1N3573 |
Diode Switching 150V 0.225A 2-Pin DO-35 |
New Jersey Semiconductor |
6 |
1N3574 |
Diode Switching 150V 0.225A 2-Pin DO-35 |
New Jersey Semiconductor |
7 |
1N3595 |
Diode Switching 150V 0.225A 2-Pin DO-35 |
New Jersey Semiconductor |
8 |
1N5225A (DO-35) |
Zener Voltage Regulator Diode |
Microsemi |
9 |
1N5225A (DO7) |
Zener Voltage Regulator Diode |
Microsemi |
10 |
APT10M07JVR |
POWER MOS V 100V 225A 0.007 Ohm |
Advanced Power Technology |
11 |
IRG7T225HF12J |
1200V 225A Ultra Fast IGBT Half-Bridge module packaged in POWIR ECO 3+ package |
International Rectifier |
12 |
K7B163625A K7B163225A K7B161825A |
512Kx36/x32 & 1Mx18-Bit Synchronous Burst SRAM Data Sheet |
Samsung Electronic |
13 |
PP225D120 |
POW-R-PAK 225A / 1200V Half Bridge IGBT Assembly |
Powerex Power Semiconductors |
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