| No. |
Part Name |
Description |
Manufacturer |
| 1 |
AD623BN |
Single Supply, Rail-to-Rail, Low Cost Instrumentation Amplifier |
Analog Devices |
| 2 |
CD4023BNSR |
CMOS Triple 3-Input NAND Gate |
Texas Instruments |
| 3 |
CD4023BNSRG4 |
CMOS Triple 3-Input NAND Gate 14-SO -55 to 125 |
Texas Instruments |
| 4 |
HEF4023BN |
Triple 3-input NAND gate |
Philips |
| 5 |
IW4023BN |
Triple 3-input NAND gate, high-voltage silicon-gate CMOS |
INTEGRAL |
| 6 |
M470L2923BN0-CA2 |
DDR SDRAM Unbuffered Module 18 4 pin Unbuffered Module based on 512Mb B-die |
Samsung Electronic |
| 7 |
M470L2923BN0-CA2 |
DDR SDRAM Unbuffered Module 18 4 pin Unbuffered Module based on 512Mb B-die |
Samsung Electronic |
| 8 |
M470L2923BN0-CB0 |
DDR SDRAM Unbuffered Module 18 4 pin Unbuffered Module based on 512Mb B-die |
Samsung Electronic |
| 9 |
M470L2923BN0-CB3 |
DDR SDRAM Unbuffered Module 18 4 pin Unbuffered Module based on 512Mb B-die |
Samsung Electronic |
| 10 |
M470L2923BN0-CCC |
DDR SDRAM Unbuffered Module 18 4 pin Unbuffered Module based on 512Mb B-die |
Samsung Electronic |
| 11 |
M470L2923BN0-CLA2 |
DDR SDRAM Unbuffered Module 18 4 pin Unbuffered Module based on 512Mb B-die |
Samsung Electronic |
| 12 |
M470L2923BN0-CLB0 |
DDR SDRAM Unbuffered Module 18 4 pin Unbuffered Module based on 512Mb B-die |
Samsung Electronic |
| 13 |
M470L2923BN0-CLB3 |
DDR SDRAM Unbuffered Module 18 4 pin Unbuffered Module based on 512Mb B-die |
Samsung Electronic |
| 14 |
M470L2923BN0-CLCC |
DDR SDRAM Unbuffered Module 18 4 pin Unbuffered Module based on 512Mb B-die |
Samsung Electronic |
| 15 |
M470L2923BNV0-CA2 |
DDR SDRAM Unbuffered Module 18 4 pin Unbuffered Module based on 512Mb B-die |
Samsung Electronic |
| 16 |
M470L2923BNV0-CB0 |
DDR SDRAM Unbuffered Module 18 4 pin Unbuffered Module based on 512Mb B-die |
Samsung Electronic |
| 17 |
M470L2923BNV0-CB3 |
DDR SDRAM Unbuffered Module 18 4 pin Unbuffered Module based on 512Mb B-die |
Samsung Electronic |
| 18 |
M470L2923BNV0-CCC |
DDR SDRAM Unbuffered Module 18 4 pin Unbuffered Module based on 512Mb B-die |
Samsung Electronic |
| 19 |
M470L2923BNV0-CLA2 |
DDR SDRAM Unbuffered Module 18 4 pin Unbuffered Module based on 512Mb B-die |
Samsung Electronic |
| 20 |
M470L2923BNV0-CLB0 |
DDR SDRAM Unbuffered Module 18 4 pin Unbuffered Module based on 512Mb B-die |
Samsung Electronic |
| 21 |
M470L2923BNV0-CLB3 |
DDR SDRAM Unbuffered Module 18 4 pin Unbuffered Module based on 512Mb B-die |
Samsung Electronic |
| 22 |
M470L2923BNV0-CLCC |
DDR SDRAM Unbuffered Module 18 4 pin Unbuffered Module based on 512Mb B-die |
Samsung Electronic |
| 23 |
MIC4423BN |
Dual 3A-Peak Low-Side MOSFET Driver Bipolar/CMOS/DMOS Process |
Micrel Semiconductor |
| 24 |
SL4023BN |
Triple 3-Input NAND Gate |
System Logic Semiconductor |
| 25 |
SM5023BNDH |
Miniature-package Crystal Oscillator Module ICs |
Nippon Precision Circuits Inc |
| 26 |
SM5023BNEH |
Miniature-package Crystal Oscillator Module ICs |
Nippon Precision Circuits Inc |
| 27 |
STIH223BNKB |
HD cable STB processor with integrated demodulator and low power standby controller |
ST Microelectronics |
| 28 |
UC2823BN |
High Speed PWM Controller |
Texas Instruments |
| 29 |
UC2823BNG4 |
High Speed PWM Controller 16-PDIP -40 to 85 |
Texas Instruments |
| 30 |
UC3823BN |
High Speed PWM Controller |
Texas Instruments |
| | | |
