| No. |
Part Name |
Description |
Manufacturer |
| 1 |
15KP200A |
Glass passivated junction transient voltage suppressor. Vrwm = 200 V. Vbr(min/max) = 220/256.0 V @ It = 1.0 mA. Ir = 5 uA. Vc = 324 V @ Ipp = 46 A. |
Panjit International Inc |
| 2 |
15KP200CA |
Glass passivated junction transient voltage suppressor. Vrwm = 200 V. Vbr(min/max) = 220/256.0 V @ It = 1.0 mA. Ir = 5 uA. Vc = 324 V @ Ipp = 46 A. |
Panjit International Inc |
| 3 |
1718-32L |
32 W, 24 V, 1750-1850 MHz common base transistor |
GHz Technology |
| 4 |
1K2S-N024 |
Input voltage 200-260 VAC;output voltage 24 VDC;output current:50 A; 1.2 KW enclosed parallel power supply |
FranMar International |
| 5 |
1K5S-N024 |
Input voltage 200-260 VAC;output voltage 24 VDC;output current:62.5 A; 1.5 KW enclosed parallel power supply |
FranMar International |
| 6 |
1N4566 |
Low-level temperature-compensated zener reference diode. Max voltage 0.024 V. |
Motorola |
| 7 |
1N4571 |
Low-level temperature-compensated zener reference diode. Max voltage 0.024 V. |
Motorola |
| 8 |
1N4576 |
Low-level temperature-compensated zener reference diode. Max voltage 0.024 V. |
Motorola |
| 9 |
1N4581 |
Low-level temperature-compensated zener reference diode. Max voltage 0.024 V. |
Motorola |
| 10 |
1N4749 |
24 V, 1 W silicon zener diode |
BKC International Electronics |
| 11 |
1N4749 |
1 WATT, 24 Volts Silicon Glass Zener Diode |
ITT Semiconductors |
| 12 |
1N4749A |
24 V, 1 W silicon zener diode |
BKC International Electronics |
| 13 |
1N4749A |
24 V, 1 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 14 |
1N5252 |
500mW, 24 Volts Silicon Glass Zener Diode |
ITT Semiconductors |
| 15 |
1N5252A |
24 V, 5.2 mA, zener diode |
Leshan Radio Company |
| 16 |
1N5252AUR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 24 V. Tolerance +-10%. |
Microsemi |
| 17 |
1N5252BUR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 24 V. Tolerance +-5%. |
Microsemi |
| 18 |
1N5252C |
24 V, 5.2 mA, zener diode |
Leshan Radio Company |
| 19 |
1N5252D |
24 V, 5.2 mA, zener diode |
Leshan Radio Company |
| 20 |
1N5252UR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 24 V. |
Microsemi |
| 21 |
1N5359B |
24 V, 50 mA, 5 W glass passivated zener diode |
Fagor |
| 22 |
1N5359B |
24 V, 5 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 23 |
1N5934B |
24 V, 1.5 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 24 |
1N6280 |
24 V, 1 mA, 1500 W unidirectional and bidirectional transient voltage suppressor diode |
Fagor |
| 25 |
1N6280A |
24 V, 1 mA, 1500 W unidirectional and bidirectional transient voltage suppressor diode |
Fagor |
| 26 |
1N6280C |
24 V, 1 mA, 1500 W unidirectional and bidirectional transient voltage suppressor diode |
Fagor |
| 27 |
1N6280CA |
24 V, 1 mA, 1500 W unidirectional and bidirectional transient voltage suppressor diode |
Fagor |
| 28 |
1N970 |
400mW, 24 Volts Silicon Glass Zener Diode |
ITT Semiconductors |
| 29 |
1N970A |
24 V, 5.2 mA, silicon planar zener diode |
Honey Technology |
| 30 |
1N970A |
24 V, zener diode |
Leshan Radio Company |
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