| No. |
Part Name |
Description |
Manufacturer |
| 1 |
24100 |
Bobbin Wound Surface Mount Inductors |
C&D Technologies |
| 2 |
BQ24100 |
bqSWITCHER(TM) Synchronous, Switch-Mode Li-Ion Charger w/ 2-A FET in QFN, 1-Cell, Standalone Version |
Texas Instruments |
| 3 |
BQ24100RHL |
bqSWITCHER(TM) Synchronous, Switch-Mode Li-Ion Charger w/ 2-A FET in QFN, 1-Cell, Standalone Version |
Texas Instruments |
| 4 |
BQ24100RHLR |
bqSWITCHER(TM) Synchronous, Switch-Mode Li-Ion Charger w/ 2-A FET in QFN, 1-Cell, Standalone Version |
Texas Instruments |
| 5 |
D1A241000 |
Reed Relay, D Type |
Cosmo Electronics |
| 6 |
D1B241000 |
Reed Relay, D Type |
Cosmo Electronics |
| 7 |
D1C241000 |
Reed Relay, D Type |
Cosmo Electronics |
| 8 |
D2A241000 |
Reed Relay, D Type |
Cosmo Electronics |
| 9 |
DZ24100 |
Zener Diodes |
Panasonic |
| 10 |
DZ2410000L |
Zener Diodes |
Panasonic |
| 11 |
EXBU24100JX |
Resistor Network - Anti-Sulfurated Chip Resistor Array |
Panasonic |
| 12 |
G2A241000 |
General purpose reed retay. Nominal voltage 24 (VDC). |
Global Components & Controls |
| 13 |
HM624100H |
4M High Speed SRAM (1-Mword x 4-bit) |
Hitachi Semiconductor |
| 14 |
HM624100HC |
4M High Speed SRAM (1-Mword x 4-bit) |
Hitachi Semiconductor |
| 15 |
HM624100HCJP-10 |
4M High Speed SRAM (1-Mword x 4-bit) |
Hitachi Semiconductor |
| 16 |
HM624100HCJP-12 |
Memory>Fast SRAM>Asynchronous SRAM |
Renesas |
| 17 |
HM624100HCJP/HCLJP |
High-Speed SRAMs |
Hitachi Semiconductor |
| 18 |
HM624100HCLJP-10 |
4M High Speed SRAM (1-Mword x 4-bit) |
Hitachi Semiconductor |
| 19 |
HM624100HCLJP-12 |
Memory>Fast SRAM>Asynchronous SRAM |
Renesas |
| 20 |
HM624100HJP-10 |
4M High Speed SRAM (1-Mword x 4-bit) |
Hitachi Semiconductor |
| 21 |
HM624100HJP-12 |
4M High Speed SRAM (1-Mword x 4-bit) |
Hitachi Semiconductor |
| 22 |
HM624100HJP-15 |
4M High Speed SRAM (1-Mword x 4-bit) |
Hitachi Semiconductor |
| 23 |
HM624100HJP/HLJP |
High-Speed SRAMs |
Hitachi Semiconductor |
| 24 |
HM624100HLJP-10 |
4M High Speed SRAM (1-Mword x 4-bit) |
Hitachi Semiconductor |
| 25 |
HM624100HLJP-12 |
4M High Speed SRAM (1-Mword x 4-bit) |
Hitachi Semiconductor |
| 26 |
HM624100HLJP-15 |
4M High Speed SRAM (1-Mword x 4-bit) |
Hitachi Semiconductor |
| 27 |
HN58W241000FPIE |
Memory>EEPROM>Serial EEPROM |
Renesas |
| 28 |
PRN110241000J |
Isolated resistor termination network |
California Micro Devices Corp |
| 29 |
PRN110241001J |
Isolated resistor termination network |
California Micro Devices Corp |
| 30 |
PRN110241002J |
Isolated resistor termination network |
California Micro Devices Corp |
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