| No. |
Part Name |
Description |
Manufacturer |
| 1 |
EXBU24162JX |
Resistor Network - Anti-Sulfurated Chip Resistor Array |
Panasonic |
| 2 |
T224162-22J |
256K x 16 DRAM EDO page mode, 22ns |
TM Technology |
| 3 |
T224162-22S |
256K x 16 DRAM EDO page mode, 22ns |
TM Technology |
| 4 |
T224162-25J |
256K x 16 DRAM EDO page mode, 25ns |
TM Technology |
| 5 |
T224162-25S |
256K x 16 DRAM EDO page mode, 25ns |
TM Technology |
| 6 |
T224162-28J |
256K x 16 DRAM EDO page mode, 28ns |
TM Technology |
| 7 |
T224162-28S |
256K x 16 DRAM EDO page mode, 28ns |
TM Technology |
| 8 |
T224162-35J |
256K x 16 DRAM EDO page mode, 35ns |
TM Technology |
| 9 |
T224162-35S |
256K x 16 DRAM EDO page mode, 35ns |
TM Technology |
| 10 |
T224162-45J |
256K x 16 DRAM EDO page mode, 45ns |
TM Technology |
| 11 |
T224162-45S |
256K x 16 DRAM EDO page mode, 45ns |
TM Technology |
| 12 |
T224162-50J |
256K x 16 DRAM EDO page mode, 50ns |
TM Technology |
| 13 |
T224162-50S |
256K x 16 DRAM EDO page mode, 50ns |
TM Technology |
| 14 |
T224162B |
256K x 16 DYNAMIC RAM EDO PAGE MODE |
Taiwan Memory Technology |
| 15 |
T224162B |
4.5 to 5.5V; 1.0W; 256K x 16 dynamic RAM: EDO page mode |
TM Technology |
| 16 |
T224162B-22 |
256K x 16 DYNAMIC RAM EDO PAGE MODE |
Taiwan Memory Technology |
| 17 |
T224162B-25 |
256K x 16 DYNAMIC RAM EDO PAGE MODE |
Taiwan Memory Technology |
| 18 |
T224162B-28 |
256K x 16 DYNAMIC RAM EDO PAGE MODE |
Taiwan Memory Technology |
| 19 |
T224162B-35 |
256K x 16 DYNAMIC RAM EDO PAGE MODE |
Taiwan Memory Technology |
| 20 |
T224162B-45 |
256K x 16 DYNAMIC RAM EDO PAGE MODE |
Taiwan Memory Technology |
| 21 |
T224162B-50 |
256K x 16 DYNAMIC RAM EDO PAGE MODE |
Taiwan Memory Technology |
| | | |
