| No. |
Part Name |
Description |
Manufacturer |
| 1 |
BF1005 |
RF-MOSFET - integrated full biasing network, VDS=5V, gfs=24mS, Gp=19dB, F=1.4dB |
Infineon |
| 2 |
BF1005R |
RF-MOSFET - integrated full biasing network, VDS=5V, gfs=24mS, Gps=19dB, F=1.4dB |
Infineon |
| 3 |
BF1005SR |
RF-MOSFET - integrated full biasing network, VDS=5V, gfs=24mS, Gp=19dB, F=1.4dB |
Infineon |
| 4 |
BF998 |
RF-MOSFET - VDS=8V, gfs=24mS, Gps=28dB, F=1dB |
Infineon |
| 5 |
BF998R |
RF-MOSFET - VDS=8V, gfs=24mS, Gps=28dB, F=1dB |
Infineon |
| 6 |
HMC224MS8 |
GaAs MMIC T/R SWITCH 5.0 - 6.0 GHz |
Hittite Microwave Corporation |
| 7 |
HMC324MS8G |
HBT driver amplifier DC 3.0 GHz |
Hittite Microwave Corporation |
| 8 |
SD200N24MSC |
Standard recovery diode |
International Rectifier |
| 9 |
SD400N24MSC |
Standard recovery diode |
International Rectifier |
| | | |
