| No. |
Part Name |
Description |
Manufacturer |
| 1 |
24N60C3 |
CoolMOS Power Transistor |
Infineon |
| 2 |
FQA24N60 |
600V N-Channel MOSFET |
Fairchild Semiconductor |
| 3 |
HGTG24N60D1 |
24A/ 600V N-Channel IGBT |
Intersil |
| 4 |
HGTG24N60D1D |
24A/ 600V N-Channel IGBT with Anti-Parallel Ultrafast Diode |
Intersil |
| 5 |
IXGR24N60C |
HiPerFASTTM IGBT ISOPLUS247TM (Electrically Isolated Back Surface) |
IXYS Corporation |
| 6 |
IXSH24N60 |
IGBT Discretes: Low Saturation Voltage Types |
IXYS |
| 7 |
IXSH24N60AU1 |
HiPerFASTTM IGBT with Diode |
IXYS Corporation |
| 8 |
IXSH24N60U1 |
HiPerFASTTM IGBT with Diode |
IXYS Corporation |
| 9 |
SPP24N60C3 |
for lowest Conduction Losses & fastest Switching |
Infineon |
| 10 |
SPW24N60C3 |
for lowest Conduction Losses & fastest Switching |
Infineon |
| 11 |
STB24N60DM2 |
N-channel 600 V, 0.175 Ohm typ., 18 A FDmesh II Plus(TM) low Qg Power MOSFET in D2PAK package |
ST Microelectronics |
| 12 |
STB24N60M2 |
N-channel 600 V, 0.168 Ohm typ., 18 A MDmesh II Plus(TM) low Qg Power MOSFET in D2PAK package |
ST Microelectronics |
| 13 |
STF24N60DM2 |
N-channel 600 V, 0.175 Ohm typ., 18 A FDmesh II Plus(TM) low Qg Power MOSFET in TO-220FP package |
ST Microelectronics |
| 14 |
STF24N60M2 |
N-channel 600 V, 0.168 Ohm typ., 18 A MDmesh II Plus(TM) low Qg Power MOSFET in TO-220FP package |
ST Microelectronics |
| 15 |
STFI24N60M2 |
N-channel 600 V, 0.168 Ohm typ., 18 A MDmesh II Plus(TM) low Qg Power MOSFET in I2PAKFP package |
ST Microelectronics |
| 16 |
STFW24N60M2 |
N-channel 600 V, 0.168 Ohm typ., 18 A MDmesh II Plus(TM) low Qg Power MOSFET in TO-3PF package |
ST Microelectronics |
| 17 |
STFW24N60M2- |
N-channel 600 V, 0.168 Ohm typ., 18 A MDmesh II Plus(TM) low Qg Power MOSFET in TO-3PF package |
ST Microelectronics |
| 18 |
STI24N60M2 |
N-channel 600 V, 0.168 Ohm typ., 18 A MDmesh II Plus(TM) low Qg Power MOSFET in D2PAK package |
ST Microelectronics |
| 19 |
STL24N60M2 |
N-channel 600 V, 0.186 Ohm typ., 18 A MDmesh II Plus(TM) low Qg Power MOSFET in a PowerFLAT 8x8 HV package |
ST Microelectronics |
| 20 |
STP24N60DM2 |
N-channel 600 V, 0.175 Ohm typ., 18 A FDmesh II Plus(TM) low Qg Power MOSFET in TO-220 package |
ST Microelectronics |
| 21 |
STP24N60M2 |
N-channel 600 V, 0.168 Ohm typ., 18 A MDmesh II Plus(TM) low Qg Power MOSFET in TO-220 package |
ST Microelectronics |
| 22 |
STW24N60DM2 |
N-channel 600 V, 0.175 Ohm typ., 18 A FDmesh II Plus(TM) low Qg Power MOSFET in TO-247 package |
ST Microelectronics |
| 23 |
STW24N60M2 |
N-channel 600 V, 0.168 Ohm typ., 18 A MDmesh II Plus(TM) low Qg Power MOSFET in TO-247 package |
ST Microelectronics |
| 24 |
TRS24N65D |
SiC Schottky barrier diode |
TOSHIBA |
| | | |
