| No. |
Part Name |
Description |
Manufacturer |
| 1 |
BZX55C24V |
Diode Zener Single 24V 6% 500mW Automotive 2-Pin DO-35 T/R |
New Jersey Semiconductor |
| 2 |
BZX55C4 |
Diode Zener Single 24V 6% 500mW Automotive 2-Pin DO-35 T/R |
New Jersey Semiconductor |
| 3 |
ENA1629 |
Power MOSFET 24V 6A 31mOhm Dual N-Channel EFCP |
ON Semiconductor |
| 4 |
ENA2179 |
N-Channel Power MOSFET 24V 6A 23mOhm Dual EFCP |
ON Semiconductor |
| 5 |
P6KE400 |
Diode TVS Single Uni-Dir 324V 600W Automotive 2-Pin DO-15 |
New Jersey Semiconductor |
| 6 |
P6KE400C |
Diode TVS Single Bi-Dir 324V 600W 2-Pin DO-15 |
New Jersey Semiconductor |
| 7 |
PT4314 |
(+/-)24V 6W, 48V-Input Isolated DC/DC Converter |
Texas Instruments |
| 8 |
PT4314A |
(+/-)24V 6W, 48V-Input Isolated DC/DC Converter |
Texas Instruments |
| 9 |
PT4314C |
(+/-)24V 6W, 48V-Input Isolated DC/DC Converter |
Texas Instruments |
| 10 |
SD1426 |
24V 60W epitaxial silicon NPN planar transistor designed for common base amplifier applications in the 800-960MHz |
SGS Thomson Microelectronics |
| 11 |
SD1496 |
900MHz 24V 60W NPN RF power transistor, class C, base stations |
SGS Thomson Microelectronics |
| 12 |
ZPY24 |
Diode Zener Single 24V 6% 1.3W 2-Pin DO-41 |
New Jersey Semiconductor |
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