No. |
Part Name |
Description |
Manufacturer |
1 |
1314AB60 |
60 W, 25 V, 1350-1400 MHz common emitter transistor |
GHz Technology |
2 |
1617AB35 |
35 W, 25 V, 1600-1700 MHz common emitter transistor |
GHz Technology |
3 |
1819AB12 |
12 W, 25 V, 1808-1880 MHz common emitter transistor |
GHz Technology |
4 |
1819AB25 |
25 W, 25 V, 1808-1880 MHz common emitter transistor |
GHz Technology |
5 |
1819AB35 |
35 W, 25 V, 1808-1880 MHz common emitter transistor |
GHz Technology |
6 |
1819AB4 |
4 W, 25 V, 1808-1880 MHz common emitter transistor |
GHz Technology |
7 |
1920A12 |
12 W, 25 V, 1930-1990 MHz common emitter transistor |
GHz Technology |
8 |
1920A20 |
20 W, 25 V, 1930-1990 MHz common emitter transistor |
GHz Technology |
9 |
1920AB12 |
12 W, 25 V, 1930-1990 MHz common emitter transistor |
GHz Technology |
10 |
1920AB25 |
25 W, 25 V, 1930-1990 MHz common emitter transistor |
GHz Technology |
11 |
1920AB35 |
35 W, 25 V, 1930-1990 MHz common emitter transistor |
GHz Technology |
12 |
1920AB4 |
4 W, 25 V, 1930-1990 MHz common emitter transistor |
GHz Technology |
13 |
1920AB60 |
60 W, 25 V, 1930-1990 MHz common emitter transistor |
GHz Technology |
14 |
1920CD35 |
35 W, 25 V, 1930-1990 MHz common emitter transistor |
GHz Technology |
15 |
1920CD60 |
60 W, 25 V, 1930-1990 MHz common emitter transistor |
GHz Technology |
16 |
1N102 |
125 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
17 |
1N127 |
125 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
18 |
1N127A |
125 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
19 |
1N142 |
125 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
20 |
1N143 |
125 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
21 |
1N267 |
25 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
22 |
1N283 |
25 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
23 |
1N3146 |
25 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
24 |
1N3592 |
25 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
25 |
1N3595 |
125 V, 500 mW silicon switching diode |
BKC International Electronics |
26 |
1N3595-1 |
125 V, 500 mW silicon switching diode |
BKC International Electronics |
27 |
1N3773 |
25 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
28 |
1N4009 |
25 V, 500 mW ultra high speed diode |
BKC International Electronics |
29 |
1N4154 |
25 V, 500 mW high speed diode |
BKC International Electronics |
30 |
1N456 |
25 V, 500 mW low leakage diode |
BKC International Electronics |
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