| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1N2256A |
Standard Rectifier (trr more than 500ns) |
Microsemi |
| 2 |
1N2256A |
Rectifier Diode |
Motorola |
| 3 |
1N5256A |
30 V, 4.2 mA, zener diode |
Leshan Radio Company |
| 4 |
1N5256A |
Zener Voltage Regulator Diode |
Microsemi |
| 5 |
1N5256A |
Zener Diode 30V |
Motorola |
| 6 |
1N5256A |
Diode Zener Single 30V 10% 500mW 2-Pin DO-35 |
New Jersey Semiconductor |
| 7 |
1N5256A (DO-35) |
Zener Voltage Regulator Diode |
Microsemi |
| 8 |
1N5256A (DO7) |
Zener Voltage Regulator Diode |
Microsemi |
| 9 |
1N5256A-1 |
Zener Voltage Regulator Diode |
Microsemi |
| 10 |
1N5256A-1E3 |
Zener Voltage Regulator Diode |
Microsemi |
| 11 |
1N5256AUR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 30 V. Tolerance +-10%. |
Microsemi |
| 12 |
1N5256AUR-1E3 |
Zener Voltage Regulator Diode |
Microsemi |
| 13 |
20KP256A |
TRANSIENT SUPPRESSOR WITH 20 |
New Jersey Semiconductor |
| 14 |
20KW256A |
256.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 15 |
27C256A12A |
2-7 V, 256K-bit CMOS EPROM (32Kx8) |
Philips |
| 16 |
27C256A12D |
2-7 V, 256K-bit CMOS EPROM (32Kx8) |
Philips |
| 17 |
27C256A12FA |
2-7 V, 256K-bit CMOS EPROM (32Kx8) |
Philips |
| 18 |
27C256A12N |
2-7 V, 256K-bit CMOS EPROM (32Kx8) |
Philips |
| 19 |
27C256A15A |
2-7 V, 256K-bit CMOS EPROM (32Kx8) |
Philips |
| 20 |
27C256A15D |
2-7 V, 256K-bit CMOS EPROM (32Kx8) |
Philips |
| 21 |
27C256A15FA |
2-7 V, 256K-bit CMOS EPROM (32Kx8) |
Philips |
| 22 |
27C256A15N |
2-7 V, 256K-bit CMOS EPROM (32Kx8) |
Philips |
| 23 |
27C256A20A |
2-7 V, 256K-bit CMOS EPROM (32Kx8) |
Philips |
| 24 |
27C256A20D |
2-7 V, 256K-bit CMOS EPROM (32Kx8) |
Philips |
| 25 |
27C256A20FA |
2-7 V, 256K-bit CMOS EPROM (32Kx8) |
Philips |
| 26 |
27C256A20N |
2-7 V, 256K-bit CMOS EPROM (32Kx8) |
Philips |
| 27 |
28C256AJC-1 |
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 120 ns. |
Turbo IC |
| 28 |
28C256AJC-1 |
High speed 120 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
Turbo IC |
| 29 |
28C256AJC-2 |
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 150 ns. |
Turbo IC |
| 30 |
28C256AJC-2 |
High speed 150 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
Turbo IC |
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