No. |
Part Name |
Description |
Manufacturer |
1 |
28LV256PC-3 |
Speed: 200 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
Turbo IC |
2 |
28LV256PC-3 |
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns. |
Turbo IC |
3 |
28LV256PC-4 |
Speed: 250 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
Turbo IC |
4 |
28LV256PC-4 |
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. |
Turbo IC |
5 |
28LV256PC-5 |
Speed: 300 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
Turbo IC |
6 |
28LV256PC-5 |
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 300 ns. |
Turbo IC |
7 |
28LV256PC-6 |
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 400 ns. |
Turbo IC |
8 |
28LV256PC-6 |
Speed: 400 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
Turbo IC |
9 |
28LV256PI-3 |
Speed: 200 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
Turbo IC |
10 |
28LV256PI-3 |
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns. |
Turbo IC |
11 |
28LV256PI-4 |
Speed: 250 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
Turbo IC |
12 |
28LV256PI-4 |
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. |
Turbo IC |
13 |
28LV256PI-5 |
Speed: 300 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
Turbo IC |
14 |
28LV256PI-5 |
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 300 ns. |
Turbo IC |
15 |
28LV256PI-6 |
Speed: 400 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
Turbo IC |
16 |
28LV256PI-6 |
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 400 ns. |
Turbo IC |
17 |
28LV256PM-3 |
Speed: 200 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
Turbo IC |
18 |
28LV256PM-3 |
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns. |
Turbo IC |
19 |
28LV256PM-4 |
Speed: 250 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
Turbo IC |
20 |
28LV256PM-4 |
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. |
Turbo IC |
21 |
28LV256PM-5 |
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 300 ns. |
Turbo IC |
22 |
28LV256PM-5 |
Speed: 300 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
Turbo IC |
23 |
28LV256PM-6 |
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 400 ns. |
Turbo IC |
24 |
28LV256PM-6 |
Speed: 400 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
Turbo IC |
25 |
AS7C3256PFD16A |
3.3V 256K x 16/18 pipeline burst synchronous SRAM |
Alliance Semiconductor |
26 |
AS7C3256PFD16A-3.5TQC |
3.3V 256K x 16 pipeline burst synchronous SRAM, 166MHz |
Alliance Semiconductor |
27 |
AS7C3256PFD16A-3.8TQC |
3.3V 256K x 16 pipeline burst synchronous SRAM, 150 MHz |
Alliance Semiconductor |
28 |
AS7C3256PFD16A-4TQC |
3.3V 256K x 16 pipeline burst synchronous SRAM, 133 MHz |
Alliance Semiconductor |
29 |
AS7C3256PFD16A-5TQC |
3.3V 256K x 16 pipeline burst synchronous SRAM, 100 MHz |
Alliance Semiconductor |
30 |
AS7C3256PFD18A |
3.3V 256K x 16/18 pipeline burst synchronous SRAM |
Alliance Semiconductor |
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