| No. |
Part Name |
Description |
Manufacturer |
| 1 |
28LV256SI-3 |
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns. |
Turbo IC |
| 2 |
28LV256SI-3 |
Speed: 200 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
Turbo IC |
| 3 |
28LV256SI-4 |
Speed: 250 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
Turbo IC |
| 4 |
28LV256SI-4 |
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. |
Turbo IC |
| 5 |
28LV256SI-5 |
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 300 ns. |
Turbo IC |
| 6 |
28LV256SI-5 |
Speed: 300 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
Turbo IC |
| 7 |
28LV256SI-6 |
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 400 ns. |
Turbo IC |
| 8 |
28LV256SI-6 |
Speed: 400 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
Turbo IC |
| 9 |
BS62LV256SI |
Very Low Power/Voltage CMOS SRAM 32K X 8 bit |
Brilliance Semiconductor |
| 10 |
BS62UV256SI |
Ultra Low Power/Voltage CMOS SRAM 32K X 8 bit |
Brilliance Semiconductor |
| 11 |
CAT25C256SI-1.8TE13 |
256K SPI serial CMOS EEPROM 1.8-6.0V |
Catalyst Semiconductor |
| 12 |
CAT25C256SI-TE13 |
256K SPI serial CMOS EEPROM 2.5-6.0V |
Catalyst Semiconductor |
| 13 |
STC62WV256SI |
VERY LOW POWER/VOLTAGE CMOS SRAM |
etc |
| 14 |
TPS81256SIPR |
Integrated Power Solution, 3W High-Efficiency boost converter module in MicroSiP? package 9-uSiP -40 to 85 |
Texas Instruments |
| 15 |
TPS81256SIPT |
Integrated Power Solution, 3W High-Efficiency boost converter module in MicroSiP? package 9-uSiP -40 to 85 |
Texas Instruments |
| 16 |
TU25C256SI |
4.5V-5.5V, CMOS SPI bus 128K electrically erasable programmable ROM 32K x 8BIT EEPROM |
Turbo IC |
| 17 |
TU25C256SI |
CMOS SPI bus. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Voltage 4.5V to 5.5V. |
Turbo IC |
| 18 |
TU25C256SI-2.7 |
2.7V-5.5V, CMOS SPI bus 128K electrically erasable programmable ROM 32K x 8BIT EEPROM |
Turbo IC |
| 19 |
TU25C256SI-2.7 |
CMOS SPI bus. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Voltage 2.7V to 5.5V. |
Turbo IC |
| 20 |
X28C256SI |
5 Volt/ Byte Alterable E2PROM |
Xicor |
| 21 |
X28C256SI-20 |
5 Volt/ Byte Alterable E2PROM |
Xicor |
| 22 |
X28C256SI-25 |
5 Volt/ Byte Alterable E2PROM |
Xicor |
| 23 |
X28C256SI-35 |
5 Volt/ Byte Alterable E2PROM |
Xicor |
| 24 |
X28HC256SI-12 |
5 Volt/ Byte Alterable E2PROM |
Xicor |
| 25 |
X28HC256SI-15 |
5 Volt/ Byte Alterable E2PROM |
Xicor |
| 26 |
X28HC256SI-70 |
5 Volt/ Byte Alterable E2PROM |
Xicor |
| 27 |
X28HC256SI-90 |
5 Volt/ Byte Alterable E2PROM |
Xicor |
| 28 |
X28VC256SI-45 |
5 Volt/ Byte Alterable E2PROM |
Xicor |
| 29 |
X28VC256SI-55 |
5 Volt/ Byte Alterable E2PROM |
Xicor |
| 30 |
X28VC256SI-70 |
5 Volt/ Byte Alterable E2PROM |
Xicor |
| | | |
