| No. |
Part Name |
Description |
Manufacturer |
| 1 |
25LF11 |
Silicon Alloy-Diffused junction avalanche rectifier 25A 800V 12kW |
TOSHIBA |
| 2 |
CY7C9925LFXC |
3.3V/2.5V Programmable Skew Clock Buffer |
Cypress |
| 3 |
CY7C9925LFXI |
3.3V/2.5V Programmable Skew Clock Buffer |
Cypress |
| 4 |
DMN3025LFG |
30V N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI |
Diodes |
| 5 |
DMN3025LFG-13 |
30V N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI |
Diodes |
| 6 |
DMN3025LFG-7 |
30V N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI |
Diodes |
| 7 |
ISPLSI5512VE-125LF256 |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 125 MHz, tpd 7.5 ns. |
Lattice Semiconductor |
| 8 |
ISPLSI5512VE-125LF256I |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 125 MHz, tpd 7.5 ns. |
Lattice Semiconductor |
| 9 |
ISPLSI5512VE-125LF272 |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 125 MHz, tpd 7.5 ns. |
Lattice Semiconductor |
| 10 |
ISPLSI5512VE-125LF272I |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 125 MHz, tpd 7.5 ns. |
Lattice Semiconductor |
| 11 |
ISPLSI5512VE-125LF388 |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 125 MHz, tpd 7.5 ns. |
Lattice Semiconductor |
| 12 |
ISPLSI5512VE-125LF388I |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 125 MHz, tpd 7.5 ns. |
Lattice Semiconductor |
| 13 |
SST25LF020A |
Memory |
Microchip |
| 14 |
SST25LF020A-33-4C-QAE |
Memory |
Microchip |
| 15 |
SST25LF020A-33-4C-QAE-T |
Memory |
Microchip |
| 16 |
SST25LF020A-33-4C-SAE |
Memory |
Microchip |
| 17 |
SST25LF020A-33-4C-SAE-T |
Memory |
Microchip |
| 18 |
SST25LF020A-33-4E-QAE |
Memory |
Microchip |
| 19 |
SST25LF020A-33-4E-QAE-T |
Memory |
Microchip |
| 20 |
SST25LF020A-33-4E-SAE |
Memory |
Microchip |
| 21 |
SST25LF020A-33-4E-SAE-T |
Memory |
Microchip |
| 22 |
SST25LF020A-33-4I-QAE |
Memory |
Microchip |
| 23 |
SST25LF020A-33-4I-QAE-T |
Memory |
Microchip |
| 24 |
SST25LF020A-33-4I-SAE |
Memory |
Microchip |
| 25 |
SST25LF020A-33-4I-SAE-T |
Memory |
Microchip |
| | | |
