| No. |
Part Name |
Description |
Manufacturer |
| 1 |
125NQ015 |
15V 120A Schottky Discrete Diode in a D-67 HALF-Pak package |
International Rectifier |
| 2 |
125NQ015 |
Schottky Rectifier |
Microsemi |
| 3 |
125NQ015R |
15V 120A Schottky DISCR. (R) Diode in a D-67 HALF-Pak package |
International Rectifier |
| 4 |
25N2C2 |
RECTIFIER STACK |
TOSHIBA |
| 5 |
25N3A2 |
RECTIFIER STACK |
TOSHIBA |
| 6 |
25N4B2 |
RECTIFIER STACK |
TOSHIBA |
| 7 |
25N6A2 |
RECTIFIER STACK |
TOSHIBA |
| 8 |
25NC11 |
General-Purpose silicon rectifier 25A |
TOSHIBA |
| 9 |
25NC12 |
Rectifier diode |
TOSHIBA |
| 10 |
25NC12 |
Silicon diffused junction rectifier 25A 1000V |
TOSHIBA |
| 11 |
25ND11 |
General-Purpose silicon rectifier 25A |
TOSHIBA |
| 12 |
25NF11 |
Silicon Alloy-Diffused junction avalanche rectifier 25A 1000V 12kW |
TOSHIBA |
| 13 |
3135-25N |
High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications |
SGS Thomson Microelectronics |
| 14 |
489D686X025N32V |
Resin-Coated, Radial-Lead Solid Tantalum Capacitors |
Vishay |
| 15 |
516D477M025NR6A |
Aluminum Capacitors + 85C, Miniature, Axial Lead |
Vishay |
| 16 |
5962-0151101QXC |
512K32 16Megabit SRAM MCM: SDM. 25ns access time, 5.0V operation. Lead finish gold. QML class Q. Total dose none |
Aeroflex Circuit Technology |
| 17 |
5962-0151101TXC |
512K32 16Megabit SRAM MCM: SDM. 25ns access time, 5.0V operation. Lead finish gold. QML class T. Total dose none |
Aeroflex Circuit Technology |
| 18 |
5962-0153201QYA |
1024K8 SRAM: SMD. 25ns access time, 3.3V operation. QML class Q. Lead finish hot solder dipped. Total dose none. |
Aeroflex Circuit Technology |
| 19 |
5962-0153201QYC |
1024K8 SRAM: SMD. 25ns access time, 3.3V operation. QML class Q. Lead finish gold. Total dose none. |
Aeroflex Circuit Technology |
| 20 |
5962-0153201QYX |
1024K8 SRAM: SMD. 25ns access time, 3.3V operation. QML class Q. Lead finish factory option. Total dose none. |
Aeroflex Circuit Technology |
| 21 |
5962-0153201TYA |
1024K8 SRAM: SMD. 25ns access time, 3.3V operation. QML class T. Lead finish hold solder dipped. Total dose none. |
Aeroflex Circuit Technology |
| 22 |
5962-0153201TYC |
1024K8 SRAM: SMD. 25ns access time, 3.3V operation. QML class T. Lead finish gold. Total dose none. |
Aeroflex Circuit Technology |
| 23 |
5962-0153201TYX |
1024K8 SRAM: SMD. 25ns access time, 3.3V operation. QML class T. Lead finish factory option. Total dose none. |
Aeroflex Circuit Technology |
| 24 |
5962-0153301QXC |
512K32 16Megabit SRAM MCM: SMD. 25ns access time, 3.3V operation. QML class Q. Lead finish gold. Total dose none. |
Aeroflex Circuit Technology |
| 25 |
5962-0153301TXC |
512K32 16Megabit SRAM MCM: SMD. 25ns access time, 3.3V operation. QML class T. Lead finish gold. Total dose none |
Aeroflex Circuit Technology |
| 26 |
5962-87539013X |
t(pd): 25ns; t(s): 15ns; t(co): 15ns; -2.0 to +7.0V; Vcc power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device |
Atmel |
| 27 |
5962-8753901LA |
t(pd): 25ns; t(s): 15ns; t(co): 15ns; -2.0 to +7.0V; Vcc power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device |
Atmel |
| 28 |
5962-87539053X |
t(pd): 25ns; t(s): 15ns; t(co): 15ns; -2.0 to +7.0V; Vcc power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device |
Atmel |
| 29 |
5962-8753905LA |
t(pd): 25ns; t(s): 15ns; t(co): 15ns; -2.0 to +7.0V; Vcc power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device |
Atmel |
| 30 |
5962-88670013X |
t(pd): 25ns; t(s): 15ns; t(co): 15ns; -2.0 to +7.0V; Vcc power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device |
Atmel |
| | | |
