| No. |
Part Name |
Description |
Manufacturer |
| 1 |
D25N10 |
Silicon diode - standard rectifier |
IPRS Baneasa |
| 2 |
D25N10 |
25A 1000V Rectifier Diode |
IPRS Baneasa |
| 3 |
D25N10R |
Silicon diode - standard rectifier |
IPRS Baneasa |
| 4 |
D25N10R |
25A 1000V Rectifier Diode |
IPRS Baneasa |
| 5 |
D325N1000 |
Silicon Diode - Standard Rectifier |
IPRS Baneasa |
| 6 |
D325N1000 |
325A 1000V Power Rectifier Diode |
IPRS Baneasa |
| 7 |
IXGH25N100 |
1000V, 50A diode |
IXYS |
| 8 |
IXGH25N100A |
1000V, 50A diode |
IXYS |
| 9 |
IXGH25N100AU1 |
High speed IGBT with Diode |
IXYS Corporation |
| 10 |
IXGH25N100U1 |
High speed IGBT with Diode |
IXYS Corporation |
| 11 |
IXGM25N100 |
1000V, 50A diode |
IXYS |
| 12 |
IXGM25N100A |
1000V, 50A diode |
IXYS |
| 13 |
MDD125N1000 |
125A 1000V Double Diode Compact Module |
IPRS Baneasa |
| 14 |
MTM25N10 |
POWER FIELD EFFECT TRANSISTOR |
Motorola |
| 15 |
MTM25N10 |
Trans MOSFET P-CH 20V 3A 3-Pin SMini3-G1 T/R |
New Jersey Semiconductor |
| 16 |
STD25N10F7 |
N-channel 100 V, 0.027 Ohm typ., 25 A, STripFET(TM) VII DeepGATE(TM) Power MOSFET in DPAK package |
ST Microelectronics |
| 17 |
STF25N10F7 |
N-channel 100 V, 0.027 Ohm typ., 25 A, STripFET(TM) VII DeepGATE(TM) Power MOSFET in TO-220FP package |
ST Microelectronics |
| 18 |
STP25N10F7 |
N-channel 100 V, 0.027 Ohm typ., 25 A, STripFET(TM) VII DeepGATE(TM) Power MOSFET in TO-220 package |
ST Microelectronics |
| 19 |
T25N10 |
Mains frequency thyristor 25A |
IPRS Baneasa |
| 20 |
TB25N10 |
Bidirectional Thyristor (triac) |
IPRS Baneasa |
| | | |
