| No. |
Part Name |
Description |
Manufacturer |
| 1 |
D25N12 |
25A 1200V Rectifier Diode |
IPRS Baneasa |
| 2 |
D25N12R |
25A 1200V Rectifier Diode |
IPRS Baneasa |
| 3 |
D325N1200 |
325A 1200V Power Rectifier Diode |
IPRS Baneasa |
| 4 |
FGA25N120AN |
Discrete, NPT IGBT |
Fairchild Semiconductor |
| 5 |
FGA25N120AND |
Copak Discrete IGBT |
Fairchild Semiconductor |
| 6 |
FGA25N120ANDTU |
Copak Discrete IGBT |
Fairchild Semiconductor |
| 7 |
FGA25N120ANTD |
1200V NPT Trench IGBT |
Fairchild Semiconductor |
| 8 |
FGA25N120ANTDTU |
1200V, 25A, NPT Trench IGBT |
Fairchild Semiconductor |
| 9 |
FGA25N120ANTU |
Discrete, NPT IGBT |
Fairchild Semiconductor |
| 10 |
FGA25N120FTD |
1200V, 25A Field Stop Trench IGBT |
Fairchild Semiconductor |
| 11 |
FGA25N12ANTD |
1200V NPT Trench IGBT |
Fairchild Semiconductor |
| 12 |
FGH25N120FTDS |
1200V, 25A, Field Stop Trench IGBT |
Fairchild Semiconductor |
| 13 |
IRG8P25N120KD |
1200V UltraFast Co-Pack IGBT in a TO-247 package |
International Rectifier |
| 14 |
IRG8P25N120KD-EPBF |
1200V UltraFast Co-Pack IGBT in a TO-247 package |
International Rectifier |
| 15 |
IXGH25N120 |
Low VCE(sat) High speed IGBT |
IXYS Corporation |
| 16 |
IXGH25N120A |
Low VCE(sat) High speed IGBT |
IXYS Corporation |
| 17 |
IXSH25N120A |
IGBT |
IXYS Corporation |
| 18 |
IXSH25N120AU1 |
IGBT with Diode |
IXYS Corporation |
| 19 |
KGF25N120KDA |
IGBT |
Korea Electronics (KEC) |
| 20 |
KGT25N120KDA |
IGBT |
Korea Electronics (KEC) |
| 21 |
KGT25N120NDA |
IGBT |
Korea Electronics (KEC) |
| 22 |
KGT25N120NDH |
IGBT |
Korea Electronics (KEC) |
| 23 |
MDD125N1200 |
125A 1200V Double Diode Compact Module |
IPRS Baneasa |
| 24 |
MGY25N120 |
Insulated Gate Bipolar Transistor |
Motorola |
| 25 |
MGY25N120 |
Insulated Gate Bipolar Transistor N-Channel |
ON Semiconductor |
| 26 |
MGY25N120-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 27 |
MGY25N120D |
Insulated Gate Bipolar Transistor with Anti-Parallel Diode |
Motorola |
| 28 |
MGY25N120D |
Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel |
ON Semiconductor |
| 29 |
MGY25N120D-D |
Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 30 |
MHPM6B25N120SL |
Hybrid Power Module |
Motorola |
| | | |
