No. |
Part Name |
Description |
Manufacturer |
1 |
1.5KE120CA |
Transient voltage suppressor. 1500 W. Breakdown voltage 114.0 V(min), 126 V(max). Test current 1.0 mA. |
Shanghai Sunrise Electronics |
2 |
1617AB15 |
15 Watts PEP, 26 Volts, Class AB Linear 1600 - 1700 MHz |
GHz Technology |
3 |
1617AB5 |
5 W, 26 V, 1600-1700 MHz common emitter transistor |
GHz Technology |
4 |
1920A05 |
5 W, 26 V, 1930-1990 MHz common emitter transistor |
GHz Technology |
5 |
1N3156 |
Temperature-compensated silicon zener reference diode. Max voltage change 0.026 V. 500 W. |
Motorola |
6 |
1N4777A |
Low-level temperature-compensated zener reference diode. Max voltage 0.026 V. |
Motorola |
7 |
1N4782A |
Low-level temperature-compensated zener reference diode. Max voltage 0.026 V. |
Motorola |
8 |
MAX1533ETJ |
6 V to 26 V, high-efficiency, 5 x output, main power-supply controller for notebook computer |
MAXIM - Dallas Semiconductor |
9 |
MAX1537ETX |
6 V to 26 V, high-efficiency, 5 x output, main power-supply controller for notebook computer |
MAXIM - Dallas Semiconductor |
10 |
MHVIC2115R2 |
2.2 GHz, 26 V, 23/34 dBm W–CDMA RF LDMOS Integrated Circuit |
Freescale (Motorola) |
11 |
MHVIC2115R2 |
MHVIC2115R2 2.2 GHz, 26 V, 23/34 dBm W-CDMA RF LDMOS Integrated Circuit |
Motorola |
12 |
MHVIC910HR2 |
960 MHz, 10 W, 26 V GSM Cellular RF LDMOS Integrated Circuit |
Freescale (Motorola) |
13 |
MHVIC910HR2 |
MHVIC910HR2 960 MHz, 10 W, 26 V GSM Cellular RF LDMOS Integrated Circuit |
Motorola |
14 |
MHW1815_D |
MHW1815 1805-1880 MHz, 15 W, 26 V, 32 dB RF Microwave Bipolar Power Amplifier - Archived |
Motorola |
15 |
MHW1915_D |
MHW1915 1930-1990 MHz, 15 W, 26 V, 31 dB, RF Microwave Bipolar Power Amplifier - Archived |
Motorola |
16 |
MRF18030A |
MRF18030AR3, MRF18030ASR3 GSM/GSM EDGE 1.8 - 1.88 GHz, 30 W, 26 V Lateral N-Channel RF Power MOSFETs |
Motorola |
17 |
MRF18030ALR3 |
GSM/GSM EDGE 1.80–1.88 GHz, 30 W, 26 V Lateral N–Channel RF Power MOSFET |
Freescale (Motorola) |
18 |
MRF18030ALSR3 |
GSM/GSM EDGE 1.80–1.88 GHz, 30 W, 26 V Lateral N–Channel RF Power MOSFET |
Freescale (Motorola) |
19 |
MRF18030AR3 |
GSM/GSM EDGE 1.80–1.88 GHz, 30 W, 26 V Lateral N–Channel RF Power MOSFET |
Freescale (Motorola) |
20 |
MRF18030ASR3 |
GSM/GSM EDGE 1.80–1.88 GHz, 30 W, 26 V Lateral N–Channel RF Power MOSFET |
Freescale (Motorola) |
21 |
MRF18030B |
MRF18030BR3, MRF18030BSR3 GSM/GSM EDGE 1.93 - 1.99 GHz, 30 W, 26 V Lateral N-Channel RF Power MOSFETs |
Motorola |
22 |
MRF18030BLR3 |
GSM/GSM EDGE 1.93–1.99 GHz, 30 W, 26 V Lateral N–Channel RF Power MOSFET |
Freescale (Motorola) |
23 |
MRF18030BLSR3 |
GSM/GSM EDGE 1.93–1.99 GHz, 30 W, 26 V Lateral N–Channel RF Power MOSFET |
Freescale (Motorola) |
24 |
MRF18030BR3 |
GSM/GSM EDGE 1.93–1.99 GHz, 30 W, 26 V Lateral N–Channel RF Power MOSFET |
Freescale (Motorola) |
25 |
MRF18030BSR3 |
GSM/GSM EDGE 1.93–1.99 GHz, 30 W, 26 V Lateral N–Channel RF Power MOSFET |
Freescale (Motorola) |
26 |
MRF18060A |
MRF18060A, MRF18060AR3, MRF18060ALSR3, MRF18060ASR3 1.80-1.88 GHz, 60 W, 26 V Lateral N-Channel RF Power MOSFETs |
Motorola |
27 |
MRF18060ALSR3 |
1.80–1.88 GHz, 60 W, 26 V Lateral N–Channel RF Power MOSFETs |
Freescale (Motorola) |
28 |
MRF18060AR3 |
1.80–1.88 GHz, 60 W, 26 V Lateral N–Channel RF Power MOSFET |
Freescale (Motorola) |
29 |
MRF18060ASR3 |
1.80–1.88 GHz, 60 W, 26 V Lateral N–Channel RF Power MOSFETs |
Freescale (Motorola) |
30 |
MRF18060B |
MRF18060B, MRF18060BR3, MRF18060BLSR3, MRF18060BSR3 1.90-1.99 GHz, 60 W, 26 V Lateral N-Channel RF Power MOSFETs |
Motorola |
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