| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1N2669 |
Rectifier Diode |
Motorola |
| 2 |
2N2669 |
Germanium PNP Transistor |
Motorola |
| 3 |
2N2669 |
Germanium PNP Power Transistor, MT-27 package |
Silicon Transistor Corporation |
| 4 |
2SC2669 |
Transistor Silicon NPN Epitaxial Planar Type (PCT process) High Frequency Amplifier Applications |
TOSHIBA |
| 5 |
2SK2669 |
Power MOSFETs / HVX-II Series (Three Terminal Type) |
Shindengen |
| 6 |
ASM3P2669 |
Low Power Peak EMI Reducing Solution |
ON Semiconductor |
| 7 |
ASM3P2669AF-06OR |
3.3 V, 6 MHz to 12 MHz, low power peak EMI reduction solution |
Alliance Semiconductor |
| 8 |
ASM3P2669AF-08SR |
3.3 V, 6 MHz to 12 MHz, low power peak EMI reduction solution |
Alliance Semiconductor |
| 9 |
ASM3P2669AF-08ST |
3.3 V, 6 MHz to 12 MHz, low power peak EMI reduction solution |
Alliance Semiconductor |
| 10 |
ASM3P2669AF-08TR |
3.3 V, 6 MHz to 12 MHz, low power peak EMI reduction solution |
Alliance Semiconductor |
| 11 |
ASM3P2669AF-08TT |
3.3 V, 6 MHz to 12 MHz, low power peak EMI reduction solution |
Alliance Semiconductor |
| 12 |
KSC2669 |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| 13 |
KSC2669 |
NPN (FM RADIO RF AMP/ MIX/ CONV/ OSC/ IF AMP) |
Samsung Electronic |
| 14 |
KSC2669OBU |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| 15 |
KSC2669YTA |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| 16 |
MAX2669 |
GPS/GNSS Ultra-Low-Noise-Figure LNAs |
MAXIM - Dallas Semiconductor |
| 17 |
MAX2669EVKIT+ |
GPS/GNSS Ultra-Low-Noise-Figure LNAs |
MAXIM - Dallas Semiconductor |
| 18 |
MAX2669EWT+ |
GPS/GNSS Ultra-Low-Noise-Figure LNAs |
MAXIM - Dallas Semiconductor |
| 19 |
MAX2669EWT+T |
GPS/GNSS Ultra-Low-Noise-Figure LNAs |
MAXIM - Dallas Semiconductor |
| 20 |
NB2669A |
Low Power, Reduced EMI Clock Synthesizer |
ON Semiconductor |
| | | |
